Inventor
Kyoung-Wan Park
Inventor
Daejeon, KR
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
B82YSpecific uses or applications of nanostructures17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10NElectric solid-state devices not otherwise provided for7%
C23CCoating metallic material4%
C30BSingle-crystal growth2%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure2%
G11CStatic stores2%
H01LSemiconductor devices2%
PatentTitleYear
11,038,136Electroluminescent device, and display device comprising thereof20216,841,082'Method of manufacturing Er-doped silicon nano-dot array and laser ablation appparatus used therein'20056,797,629'Method of manufacturing nano transistors'20046,770,534'Ultra small size vertical MOSFET device and method for the manufacture thereof'20046,723,587'Ultra small-sized SOI MOSFET and method of fabricating the same'20046,693,294'Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same'20046,638,823'Ultra small size vertical MOSFET device and method for the manufacture thereof'20036,620,668'Method of fabricating MOS transistor having shallow source/drain junction regions'20036,489,587'Fabrication method of erbium-doped silicon nano-size dots'20026,323,504'Single-electron memory device using an electron-hole coulomb blockade'20016,242,326'Method for fabricating compound semiconductor substrate having quantum dot array structure'20016,037,198'Method of fabricating SOI wafer'20005,994,714'Quantum diffraction transistor'19995,940,696'Method of manufacturing a quantum diffraction transistor'19995,883,419'Ultra-thin MO-C film transistor'19995,880,484'Lateral resonant tunneling transistor having two non-symmetric quantum dots'19995,872,372'Thin film transistor with piezoelectric film'19995,760,675'Piezoresistive device and fabrication method thereof'19985,519,232'Quantum interference device'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2005Patents assigned to KOREA ELECTRONICS TELECOMM (18)· patent assignee history
1996–2004Based in Daejeon, KR· patent location history
1999–2004Based in Taejon, KR· patent location history
2003–2005Based in Daejon, KR· patent location history
2004Based in Kumi-shi, KR· patent location history
2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (1)· patent assignee history
2021Based in Seongnam-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 18 | 1996–2005 |
| SAMSUNG ELECTRONICS CO LTD | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Daejeon, KR | 8 | 1996–2004 |
| Taejon, KR | 7 | 1999–2004 |
| Daejon, KR | 2 | 2003–2005 |
| Seongnam-si, KR | 1 | 2021 |
| Kumi-shi, KR | 1 | 2004 |