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Inventor

Carlo Riva

Inventor
Varese, IT

Overview

59→
Patents
1988–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C07Dprimary
C07DHeterocyclic compounds21%
H10BElectronic memory devices18%
H10DInorganic electric semiconductor devices16%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
A61KPreparations for medical, dental or toiletry purposes5%
G11CStatic stores5%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
C07HSugars2%
PatentTitleYear
9,889,121'Heterocyclylalkyne derivatives and their use as modulators of mGluR5 receptors'20189,593,127'Heterocyclylalkyne derivatives and their use as modulators of mGluR5 receptors'20178,580,962'Spiroheterocyclic compounds as mGlu5 antagonists'20138,518,916'Heterocyclic derivatives as M-GLU5 antagonists'20137,704,960'Macrolide compounds endowed with antiinflammatory activity'20107,488,811'Macrolide compounds endowed with antiinflammatory activity'20097,071,197'N,N-disubstituted diazocycloalkanes'20066,894,052'Diarylalkylpiperazines active on the lower urinary tract'20056,680,319'Isoxazolecarboxamide derivatives'20046,507,067'Flash EEPROM with integrated device for limiting the erase source voltage'20036,486,163'Thienopyranecarboxamide derivatives'20026,403,594'Benzopyran derivatives'20026,399,614'1-(N-phenylaminoalkyl)piperazine derivatives substituted at position 2 of the phenyl ring'20026,387,909'Thienopyranecarboxamide derivatives'20026,365,591'Isoxazolecarboxamide derivatives'20026,355,523'Manufacturing process for making single polysilicon level flash EEPROM cell'20026,306,861'Thienopyrancecarboxamide derivatives'20016,278,163'HV transistor structure and corresponding manufacturing method'2001RE037308'EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit'20016,271,234'1,4-disubstituted piperazines'20016,248,630'Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC'20016,210,994'Process for forming an edge structure to seal integrated electronic devices, and corresponding device'20016,071,920'1-(N-phenylaminoalkyl)piperazine derivatives substituted at position 2 of the phenyl ring'20006,057,591'Process for forming an edge structure to seal integrated electronic devices, and corresponding device'20006,004,847'Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC'19995,977,591'High-voltage-resistant MOS transistor, and corresponding manufacturing process'19995,936,298'Method for realizing magnetic circuits in an integrated circuit'19995,936,276'Single polysilicon level flash EEPROM cell and manufacturing process therefor'19995,920,776'Method of making asymmetric nonvolatile memory cell'19995,915,185'Method of producing MOSFET transistors by means of tilted implants'19995,856,221'Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding IC'19995,793,673'Double polysilicon EEPROM cell and corresponding manufacturing process and programming method'19985,792,670'Method of manufacturing double polysilicon EEPROM cell and access transistor'19985,712,814'Nonvolatile memory cell and a method for forming the same'19985,677,871'Circuit structure for a memory matrix and corresponding manufacturing method'19975,605,896'Bicyclic heterocyclic derivatives having .alpha..sub.1 adrenergic and 5HT.sub.1A activities'19975,597,750'Method of manufacturing a matrix of memory cells having control gates'19975,553,017'Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same'19965,527,728'Method of making thin oxide portions consisting of gate and tunnel oxides particularly in electrically erasable and programmable read-only memory cells'19965,479,367'N-channel single polysilicon level EPROM cell'19955,474,994'Bicyclic heterocyclic derivatives having .alpha..sub.1 -adrenergic and 5HT.sub.1A'19955,453,518'Flavone derivatives'19955,403,842'Benzopyran and benzothiopyran derivatives'19955,393,684'Method of making thin oxide portions particularly in electrically erasable and programmable read-only memory cells'19955,367,483'Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same'19945,322,803'Process for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cells'19945,307,312'Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process'19945,245,039'Process for preparation of enantiomerically pure polysubstituted 1,4-dihydropyridines'19935,223,134'Device for the rapid fastening and unfastening of tubular filtering fabrics'19935,132,239'Process for manufacturing EEPROM memory cells having a single level of polysilicon and thin oxide by using differential oxidation'19925,107,461'EEPROM memory cell with improved protection against errors due to cell breakdown'19925,086,008'Process for obtaining high-voltage N channel transistors particularly for EEPROM memories with CMOS technology'19925,081,610'Reference cell for reading EEPROM memory devices'19924,971,984'2-methylthiomethyl-dihydropyridines and pharmaceutical compositions containing them'19904,956,569'CMOS logic circuit for high voltage operation'19904,935,433'2-(acylthio)methyl dihydropyridines, and pharmaceutical compositions containing them'19904,935,790'EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit'19904,823,316'Eeprom memory cell with a single polysilicon level and a tunnel oxide zone'19894,780,431'Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2001Based in Monza, IT· patent location history
1990–2001Patents assigned to SGS THOMSON MICROELECTRONICS (21)· patent assignee history
1990–1997Based in Milan, IT· patent location history
1993–2013Patents assigned to RIVA CARLO (3)· patent assignee history
1994–2003Patents assigned to ST MICROELECTRONICS SRL (9)· patent assignee history
1995–2006Patents assigned to RECORDATI CHEM PHARM (15)· patent assignee history
1995–2018Based in Varese, IT· patent location history
1998–2003Based in Renate, IT· patent location history
2009–2010Based in Inverigo, IT· patent location history
2013–2018Patents assigned to RECORDATI IRELAND LTD (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SGS THOMSON MICROELECTRONICS211990–2001
RECORDATI CHEM PHARM151995–2006
ST MICROELECTRONICS SRL91994–2003
RECORDATI IRELAND LTD42013–2018
RIVA CARLOself31993–2013
Locations
LocationPatentsSpan
Varese, IT191995–2018
Monza, IT161988–2001
Renate, IT151998–2003
Milan, IT51990–1997
Inverigo, IT22009–2010