Inventor
Dmitry Lubomirsky
Inventor
Cupertino, CA, US
Overview
Patents· 168 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01JElectric discharge tubes or discharge lamps20%
C23CCoating metallic material14%
H01LSemiconductor devices14%
Y10TTechnical subjects covered by former us classification3%
H05HPlasma technique3%
C25DProcesses for the electrolytic or electrophoretic production of coatings2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
B05BSpraying apparatus2%
PatentTitleYear
11,130,142Showerhead having a detachable gas distribution plate202111,101,136Process window widening using coated parts in plasma etch processes202111,062,887High temperature RF heater pedestals202111,049,698Dual-channel showerhead with improved profile202111,049,755Semiconductor substrate supports with embedded RF shield202111,024,486Semiconductor processing systems having multiple plasma configurations202110,829,855Gas distribution showerhead for semiconductor processing202010,796,922Systems and methods for internal surface conditioning assessment in plasma processing equipment202010,755,900Multi-layer plasma erosion protection for chamber components202010,707,061Systems and methods for internal surface conditioning in plasma processing equipment202010,699,879Two piece electrode assembly with gap for plasma control202010,625,277Showerhead having a detachable gas distribution plate202010,607,867Bolted wafer chuck thermal management systems and methods for wafer processing systems202010,593,560Magnetic induction plasma source for semiconductor processes and equipment202010,593,523Systems and methods for internal surface conditioning in plasma processing equipment202010,577,690Gas distribution showerhead for semiconductor processing202010,573,496Direct outlet toroidal plasma source202010,559,451Apparatus with concentric pumping for multiple pressure regimes202010,551,328Ceramic ring test device202010,550,472Flow control features of CVD chambers202010,546,729Dual-channel showerhead with improved profile202010,541,184Optical emission spectroscopic techniques for monitoring etching202010,541,113Chamber with flow-through source202010,522,371Systems and methods for improved semiconductor etching and component protection201910,504,700Plasma etching systems and methods with secondary plasma injection201910,504,754Systems and methods for improved semiconductor etching and component protection201910,504,697Particle generation suppresor by DC bias modulation201910,490,418Systems and methods for internal surface conditioning assessment in plasma processing equipment201910,468,276Thermal management systems and methods for wafer processing systems201910,468,285High temperature chuck for plasma processing systems201910,460,915Rotatable substrate support having radio frequency applicator201910,453,655Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion201910,431,429Systems and methods for radial and azimuthal control of plasma uniformity201910,431,435Wafer carrier with independent isolated heater zones201910,424,485Enhanced etching processes using remote plasma sources201910,364,197Heat treated ceramic substrate having ceramic coating201910,354,843Chemical control features in wafer process equipment201910,340,124Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide201910,319,649Optical emission spectroscopy (OES) for remote plasma monitoring201910,297,458Process window widening using coated parts in plasma etch processes201910,283,321Semiconductor processing system and methods using capacitively coupled plasma201910,271,416High efficiency triple-coil inductively coupled plasma source with phase control201910,253,406Method for forming yttrium oxide on semiconductor processing equipment201910,256,079Semiconductor processing systems having multiple plasma configurations201910,233,554Aluminum electroplating and oxide formation as barrier layer for aluminum semiconductor process equipment201910,224,180Chamber with flow-through source201910,224,210Plasma processing system with direct outlet toroidal plasma source201910,214,815Surface treated aluminum nitride baffle201910,177,050Methods and apparatus for controlling substrate uniformity201910,170,282Insulated semiconductor faceplate designs201910,153,133Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion201810,147,620Bolted wafer chuck thermal management systems and methods for wafer processing systems201810,096,496Process chamber for etching low K and other dielectric films201810,062,585Oxygen compatible plasma source201810,020,170Chemistry compatible coating material for advanced device on-wafer particle performance201810,010,912Particle reduction via throttle gate valve purge201810,008,366Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing20189,991,134Processing systems and methods for halide scavenging20189,975,758Wafer processing equipment having exposable sensing layers20189,978,564Chemical control features in wafer process equipment20189,972,477Multiple point gas delivery apparatus for etching materials20189,966,240Systems and methods for internal surface conditioning assessment in plasma processing equipment20189,947,559Thermal management of edge ring in semiconductor processing20189,948,214High temperature electrostatic chuck with real-time heat zone regulating capability20189,934,942Chamber with flow-through source20189,922,840'Adjustable remote dissociation'20189,903,020'Generation of compact alumina passivation layers on aluminum plasma equipment components'20189,892,888'Particle generation suppresor by DC bias modulation'20189,885,117'Conditioned semiconductor system parts'20189,874,524In-situ spatially resolved plasma monitoring by using optical emission spectroscopy20189,846,130Ceramic ring test device20179,837,249Radial waveguide systems and methods for post-match control of microwaves20179,773,648'Dual discharge modes operation for remote plasma'20179,741,593'Thermal management systems and methods for wafer processing systems'20179,728,437'High temperature chuck for plasma processing systems'20179,725,302'Wafer processing equipment having exposable sensing layers'20179,704,723'Processing systems and methods for halide scavenging'20179,691,645'Bolted wafer chuck thermal management systems and methods for wafer processing systems'20179,681,497'Multi zone heating and cooling ESC for plasma process chamber'20179,666,414'Process chamber for etching low k and other dielectric films'20179,659,753'Grooved insulator to reduce leakage current'20179,659,792'Processing systems and methods for halide scavenging'20179,659,803'Electrostatic chuck with concentric cooling base'20179,646,807'Sealing groove methods for semiconductor equipment'20179,610,591'Showerhead having a detachable gas distribution plate'20179,607,856'Selective titanium nitride removal'20179,604,249'Innovative top-coat approach for advanced device on-wafer particle performance'20179,593,421'Particle generation suppressor by DC bias modulation'20179,564,296'Radial waveguide systems and methods for post-match control of microwaves'20179,499,898'Layered thin film heater and method of fabrication'20169,460,898'Plasma generation chamber with smooth plasma resistant coating'20169,449,850'Processing systems and methods for halide scavenging'20169,412,579'Methods and apparatus for controlling substrate uniformity'20169,394,615'Plasma resistant ceramic coated conductive article'20169,362,130'Enhanced etching processes using remote plasma sources'20169,355,922'Systems and methods for internal surface conditioning in plasma processing equipment'20169,343,289'Chemistry compatible coating material for advanced device on-wafer particle performance'20169,299,537'Radial waveguide systems and methods for post-match control of microwaves'20169,299,538'Radial waveguide systems and methods for post-match control of microwaves'20169,285,168'Module for ozone cure and post-cure moisture treatment'20169,222,172'Surface treated aluminum nitride baffle'20159,212,099'Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics'20159,202,736'Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing'20159,184,055'Processing systems and methods for halide scavenging'20159,165,783'Method of patterning a low-k dielectric film'20159,153,442'Processing systems and methods for halide scavenging'20159,144,147'Semiconductor processing system and methods using capacitively coupled plasma'20159,132,436'Chemical control features in wafer process equipment'20159,117,855'Polarity control for remote plasma'20159,093,371'Processing systems and methods for halide scavenging'20159,093,389'Method of patterning a silicon nitride dielectric film'20159,090,046'Ceramic coated article and process for applying ceramic coating'20159,068,265'Gas distribution plate with discrete protective elements'20159,040,422'Selective titanium nitride removal'20159,023,732'Processing systems and methods for halide scavenging'20158,941,969'Single-body electrostatic chuck'20158,940,642'Method of multiple patterning of a low-K dielectric film'20158,937,800'Electrostatic chuck with advanced RF and temperature uniformity'20158,894,767'Flow control features of CVD chambers'20148,802,572'Method of patterning a low-k dielectric film'20148,771,538'Plasma source design'20148,742,665'Plasma source design'20148,741,775'Method of patterning a low-K dielectric film'20148,709,953'Pulsed plasma with low wafer temperature for ultra thin layer etches'20148,524,004'Loadlock batch ozone cure'20138,409,355'Low profile process kit'20138,357,435'Flowable dielectric equipment and processes'20138,333,842'Apparatus for etching semiconductor wafers'20128,232,176'Dielectric deposition and etch back processes for bottom up gapfill'20128,108,981'Method of making an electrostatic chuck with reduced plasma penetration and arcing'20128,022,377'Method and apparatus for excimer curing'20117,989,365'Remote plasma source seasoning'20117,972,968'High density plasma gapfill deposition-etch-deposition process etchant'20117,964,040'Multi-port pumping system for substrate processing chambers'20117,848,076'Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing'20107,827,930'Apparatus for electroless deposition of metals onto semiconductor substrates'20107,789,993'Internal balanced coil for inductively coupled high density plasma processing chamber'20107,654,221'Apparatus for electroless deposition of metals onto semiconductor substrates'20107,651,934'Process for electroless copper deposition'20107,572,647'Internal balanced coil for inductively coupled high density plasma processing chamber'20097,473,339'Slim cell platform plumbing'20097,465,358'Measurement techniques for controlling aspects of a electroless deposition process'20087,341,633'Apparatus for electroless deposition'20087,323,058'Apparatus for electroless deposition of metals onto semiconductor substrates'20087,285,195'Electric field reducing thrust plate'20077,273,535'Insoluble anode with an auxiliary electrode'20077,247,222'Electrochemical processing cell'20077,223,323'Multi-chemistry plating system'20077,205,233'Method for forming CoWRe alloys by electroless deposition'20077,189,313'Substrate support with fluid retention band'20077,138,014'Electroless deposition apparatus'20067,025,861'Contact plating apparatus'20066,935,466'Lift pin alignment and operation methods and apparatus'20056,869,516'Method for removing electrolyte from electrical contacts and wafer touching areas'20056,824,612'Electroless plating system'20046,802,947'Apparatus and method for electro chemical plating using backside electrical contacts'20046,770,565'System for planarizing metal conductive layers'20046,742,279'Apparatus and method for rinsing substrates'20046,673,199'Shaping a plasma with a magnetic field to control etch rate uniformity'20046,592,709'Method and apparatus for plasma processing'20036,537,011'Method and apparatus for transferring and supporting a substrate'20036,466,426'Method and apparatus for thermal control of a semiconductor substrate'20026,449,871'Semiconductor process chamber having improved gas distributor'20026,444,040'Gas distribution plate'20026,369,493'Microwave plasma applicator having a thermal transfer medium between a plasma containing tube and a cooling jacket'20026,326,597'Temperature control system for process chamber'20016,243,966'Air amplifier with uniform output flow pattern'20016,185,839'Semiconductor process chamber having improved gas distributor'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2021Patents assigned to APPLIED MATERIALS INC (168)· patent assignee history
2001–2021Based in Cupertino, CA, US· patent location history
2004Based in Cuppertino, CA, US· patent location history
2012–2019Patents assigned to LUBOMIRSKY DMITRY (18)· patent assignee history
2012–2019Patents assigned to CHEN XINGLONG (5)· patent assignee history
2012–2015Patents assigned to NEMANI SRINIVAS D (4)· patent assignee history
2013–2019Patents assigned to VENKATARAMAN SHANKAR (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 168 | 2001–2021 |
| LUBOMIRSKY DMITRYself | 18 | 2012–2019 |
| CHEN XINGLONG | 5 | 2012–2019 |
| NEMANI SRINIVAS D | 4 | 2012–2015 |
| VENKATARAMAN SHANKAR | 4 | 2013–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Cupertino, California, US | 167 | 2001–2021 |
| Cuppertino, California, US | 1 | 2004 |