LexDanaLexDanabeta
Inventor

Kensaku Yamamoto

Inventor
Osaka, JP

Overview

36→
Patents
1997–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices13%
H10HInorganic light-emitting semiconductor devices having potential barriers10%
G01CMeasuring distances, levels or bearings8%
H01LSemiconductor devices8%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G06FElectric digital data processing5%
H10NElectric solid-state devices not otherwise provided for5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
PatentTitleYear
10,609,817Wiring-buried glass substrate, and inertial sensor element and inertial sensor using same202010,546,933Switching element and method of manufacturing the same202010,468,520Switching element and method of manufacturing the same201910,145,685Angular velocity sensor element and angular velocity sensor using same201810,119,821Angular velocity sensor20189,835,641Angular velocity detection device and angular velocity sensor including the same20179,640,655'Semiconductor device and manufacturing method of semiconductor device'20179,632,105'Angular velocity sensor for suppressing fluctuation of detection sensitivity'20179,400,180'Angular velocity sensor and detection element used therein'20169,303,993'Angular velocity sensor'20169,164,119'Angular velocity detection device and angular velocity sensor including the same'20158,931,514'Liquid flow rate control valve'20158,612,745'Authentication ticket processing apparatus and method with improved performance for self-contained ticket'20138,518,809'Manufacturing method of silicon carbide single crystal'20138,492,867'Semiconductor device including cell region and peripheral region having high breakdown voltage structure'20138,470,091'SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device'20138,154,074'Silicon carbide semiconductor device and manufacturing method of the same'20127,993,966'Method for manufacturing silicon carbide semiconductor device having high channel mobility'20117,994,513'Silicon carbide semiconductor device including deep layer'20117,850,084'Computer apparatus'20107,800,126'III-V group compound semiconductor light emitting device and manufacturing method thereof'20107,730,069'Full-text search device performing merge processing by using full-text index-for-registration/ deletion storage part with performing registration/deletion processing by using other full-text index-for-registration/deletion storage part'20107,667,269'Trench gate type semiconductor device'20107,664,829'Document managing system, document managing apparatus and document managing method'20107,644,097'Full-text search device performing merge processing by using full-text index-for-registration/deletion storage part with performing registration/deletion processing by using other full-text index-for-registration/deletion storage part'20107,587,677'Workflow management apparatus and method'20097,527,025'Internal combustion engine variable compression ratio system'20097,498,658'Trench gate type insulated gate bipolar transistor'20097,105,859'Nitride semiconductor light-emitting diode chip and method of manufacturing the same'20067,023,026'Light emitting device of III-V group compound semiconductor and fabrication method therefor'20066,969,873'Nitride gallium compound semiconductor light emission device'20056,940,099'Semiconductor light emitting element and semiconductor light emitting device'20056,844,572'Light emitting semiconductor device and method of fabricating the same'20056,603,146'Gallium nitride group compound semiconductor light-emitting device'20036,555,847'Nitride based semiconductor light emitting element'20035,680,612'Document retrieval apparatus retrieving document data using calculated record identifier'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2010Patents assigned to RICOH KK (5)· patent assignee history
2003–2010Patents assigned to SHARP KK (8)· patent assignee history
2009–2017Patents assigned to DENSO CORP (9)· patent assignee history
2009–2013Based in Chiryu, JP· patent location history
2009–2013Based in Saitama, JP· patent location history
2010–2020Based in Osaka, JP· patent location history
2012–2017Patents assigned to YAMAMOTO KENSAKU (8)· patent assignee history
2015–2020Patents assigned to PANASONIC IP MAN CO LTD (8)· patent assignee history
2016–2017Based in Fukui, JP· patent location history
2019–2020Based in Kariya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
DENSO CORP92009–2017
PANASONIC IP MAN CO LTD82015–2020
SHARP KK82003–2010
YAMAMOTO KENSAKUself82012–2017
RICOH KK51997–2010
Locations
LocationPatentsSpan
Osaka, JP72010–2020
Chiryu, JP72009–2013
Saitama, JP62009–2013
Kariya, JP22019–2020
Fukui, JP22016–2017