Inventor
Gary W. Rubloff
Inventor
Clarksville, MD, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices11%
G01RMeasuring electric variables10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
C23CCoating metallic material6%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
H01GCapacitors5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B82YSpecific uses or applications of nanostructures3%
C09DCoating compositions, e.g. paints, varnishes or lacquers3%
PatentTitleYear
10,826,065Protection layers for metal anodes202010,032,569Nanodevice arrays for electrical energy storage, capture and management and method for their formation20188,912,522'Nanodevice arrays for electrical energy storage, capture and management and method for their formation'20148,378,333'Lateral two-terminal nanotube devices and method for their formation'20137,883,615'Controlled electrochemical deposition of polysaccharide films and hydrogels, and materials formed therefrom'20117,820,227'Biolithographical deposition and materials and devices formed therefrom'20107,790,010'Spatially selective deposition of polysaccharide layer onto patterned template'20107,375,404'Fabrication and integration of polymeric bioMEMS'20086,821,910'Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation'20046,482,649'Acoustic consumption monitor'20025,290,358'Apparatus for directional low pressure chemical vapor deposition (DLPCVD)'19945,284,792'Full-wafer processing of laser diodes with cleaved facets'19945,155,657'High area capacitor formation using material dependent etching'19925,153,813'High area capacitor formation using dry etching'19924,886,681'Metal-polymer adhesion by low energy bombardment'19894,845,425'Full chip integrated circuit tester'19894,794,863'Motive structure for transporting workpieces'19894,786,864'Photon assisted tunneling testing of passivated integrated circuits'19884,784,975'Post-oxidation anneal of silicon dioxide'19884,720,401'Enhanced adhesion between metals and polymers'19884,706,018'Noncontact dynamic tester for integrated circuits'19874,703,260'Full chip integrated circuit tester'19874,692,348'Low temperature shallow doping technique'19874,670,710'Noncontact full-line dynamic AC tester for integrated circuits'19874,644,264'Photon assisted tunneling testing of passivated integrated circuits'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–1994Patents assigned to IBM (15)· patent assignee history
1987–1989Based in Katonah, NY, US· patent location history
1988–1994Based in Waccabuc, NY, US· patent location history
2002Based in Ellicott City, MD, US· patent location history
2004–2020Patents assigned to UNIV MARYLAND (9)· patent assignee history
2004–2020Based in Clarksville, MD, US· patent location history
2013–2014Patents assigned to BANERJEE PARAG (2)· patent assignee history
2013–2014Patents assigned to LEE SANG BOK (2)· patent assignee history
2013–2014Patents assigned to PEREZ ISRAEL (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 15 | 1987–1994 |
| UNIV MARYLAND | 9 | 2004–2020 |
| BANERJEE PARAG | 2 | 2013–2014 |
| LEE SANG BOK | 2 | 2013–2014 |
| PEREZ ISRAEL | 2 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Clarksville, Maryland, US | 9 | 2004–2020 |
| Katonah, New York, US | 9 | 1987–1989 |
| Waccabuc, New York, US | 6 | 1988–1994 |
| Ellicott City, Maryland, US | 1 | 2002 |