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Inventor

Shumin Wang

Inventor
Naperville, IL, US

Overview

50→
Patents
1998–2021
Patent span
Chemistry
Primary field (CPC C)

Patents· 50 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C09Gprimary
C09GPolishing compositions24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
C09KMaterials for miscellaneous applications, not provided for elsewhere16%
C23FNon-mechanical removal of metallic material from surface8%
B24BMachines, devices, or processes for grinding or polishing7%
F24HFluid heaters, e.g. water or air heaters, having heat-generating means, e.g. heat pumps, in general2%
G11BInformation storage based on relative movement between record carrier and transducer2%
H05BElectric heating2%
A61KPreparations for medical, dental or toiletry purposes1%
B60HArrangements of heating, cooling, ventilating or other air-treating devices specially adapted for passenger or goods spaces of vehicles1%
PatentTitleYear
10,976,796Dynamic range enhancement for self-capacitance measurement202110,742,330Measurement device202010,059,306Defroster and a vehicle having the same20189,952,297Parallel plate transmission line for broadband nuclear magnetic resonance imaging20189,927,147'PTC electric heating assembly, electric heating device and electric vehicle'20189,890,472'Monolithic integrated lattice mismatched crystal template and preparation method thereof'20189,879,880'Electric heater, and apparatus, heating and air conditioning system, and vehicle comprising the same'20189,850,571Method for preparing graphene20179,463,220'Method for inducing twin calving'20168,125,225'Transmit profile control in MRI'20128,038,749'Composition for removing photoresist layer and method for using it'20117,381,648'Chemical mechanical polishing slurry useful for copper substrates'20087,354,530'Chemical mechanical polishing systems and methods for their use'20087,044,836'Coated metal oxide particles for CMP'20067,021,993'Method of polishing a substrate with a polishing system containing conducting polymer'20066,984,588'Compositions for oxide CMP'20066,976,905'Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system'20056,952,100'Phase controlled surface coil magnetic resonance imaging'20056,867,140'Method of polishing a multi-layer substrate'20056,855,266'Polishing system with stopping compound and method of its use'20056,852,632'Method of polishing a multi-layer substrate'20056,840,971'Chemical mechanical polishing systems and methods for their use'20056,811,474'Polishing composition containing conducting polymer'20046,793,559'Composition and method for polishing rigid disks'20046,767,476'Polishing composition for metal CMP'20046,689,692'Composition for oxide CMP'20046,646,348'Silane containing polishing composition for CMP'20036,592,776'Polishing composition for metal CMP'20036,582,623'CMP composition containing silane modified abrasive particles'20036,569,350'Chemical mechanical polishing slurry useful for copper substrates'20036,541,434'Cleaning solution for semiconductor surfaces following chemical-mechanical polishing'20036,471,884'Method for polishing a memory or rigid disk with an amino acid-containing composition'20026,468,137'Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system'20026,447,371'Chemical mechanical polishing slurry useful for copper/tantalum substrates'20026,435,947'CMP polishing pad including a solid catalyst'20026,432,828'Chemical mechanical polishing slurry useful for copper substrates'20026,395,693'Cleaning solution for semiconductor surfaces following chemical-mechanical polishing'20026,362,104'Method for polishing a substrate using a CMP slurry'20026,362,106'Chemical mechanical polishing method useful for copper substrates'20026,347,978'Composition and method for polishing rigid disks'20026,316,365'Chemical-mechanical polishing method'20016,316,366'Method of polishing using multi-oxidizer slurry'20016,309,560'Chemical mechanical polishing slurry useful for copper substrates'20016,217,416'Chemical mechanical polishing slurry useful for copper/tantalum substrates'20016,177,026'CMP slurry containing a solid catalyst'20016,126,853'Chemical mechanical polishing slurry useful for copper substrates'20006,063,306'Chemical mechanical polishing slurry useful for copper/tantalum substrate'20006,039,891'Multi-oxidizer precursor for chemical mechanical polishing'20006,033,596'Multi-oxidizer slurry for chemical mechanical polishing'20005,783,489'Multi-oxidizer slurry for chemical mechanical polishing'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2000Patents assigned to CABOT CORP (4)· patent assignee history
1998–2008Based in Naperville, IL, US· patent location history
2000–2008Patents assigned to CABOT MICROELECTRONICS CORP (33)· patent assignee history
2008–2018Patents assigned to WANG SHUMIN (4)· patent assignee history
2011–2018Based in Shanghai, CN· patent location history
2017–2018Patents assigned to SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS (2)· patent assignee history
2018Patents assigned to BYD CO LTD (3)· patent assignee history
2018–2020Based in Shenzhen, CN· patent location history
2018Based in Guangdong, CN· patent location history
2021Based in Palo Alto, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CABOT MICROELECTRONICS CORP332000–2008
CABOT CORP41998–2000
WANG SHUMINself42008–2018
BYD CO LTD32018
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS22017–2018
Locations
LocationPatentsSpan
Naperville, Illinois, US381998–2008
Shanghai, CN32011–2018
Shenzhen, CN22018–2020
Guangdong, CN22018
Palo Alto, California, US12021