Inventor
Jiun Nan Chen
Inventor
Taipei, TW
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices38%
H10DInorganic electric semiconductor devices38%
G02BOptical elements, systems or apparatus13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
PatentTitleYear
7,884,412'System and method of forming a split-gate flash memory structure including partial circular sidewalls of the floating gates and control gates'20117,148,098'System and method of forming a split-gate flash memory structure'20066,958,249'Method to monitor process charging effect'20056,947,196'Trench-embedded mirror structure for double substrate spatial light modulator'20056,808,985'Products derived from embedded flash/EEPROM products'20046,803,283'Method to code flashROM using LDD and source/drain implant'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2011Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history
2004–2011Based in Taipei, TW· patent location history
2004Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 6 | 2004–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taipei, TW | 5 | 2004–2011 |
| Hsinchu, TW | 1 | 2004 |