Inventor
CHIA-YANG LIAO
Inventor
TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices40%
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
12,218,216Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a fin202512,125,891Semiconductor device having gate spacers extending below a fin top surface202411,854,825Gate structure of semiconductor device and method for forming the same202311,309,189Fin field effect transistor (FinFET) device structure and method for forming the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 4 | 2022–2025 |