Inventor
Jan Paul van der Wagt
Inventor
Carlsbad, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures19%
H03KPulse technique17%
G11CStatic stores15%
G01RMeasuring electric variables6%
H03FAmplifiers6%
H03HImpedance networks, e.g. resonant circuits6%
G06FElectric digital data processing4%
H03GControl of amplification4%
H04LTransmission of digital information, e.g. telegraphic communication4%
H05KPrinted circuits4%
PatentTitleYear
10,761,130Voltage driver circuit calibration202010,276,229Adjusting signal timing20199,503,065'Deskew of rising and falling signal edges'20169,425,747'System and method of reducing power consumption for audio playback'20169,397,670'Edge generator-based phase locked loop reference clock generator for automated test system'20169,279,857'Automated test system with edge steering'20169,147,620'Edge triggered calibration'20158,410,824'Buffer with active output impedance matching'20137,868,681'Programmable gain circuit'20117,728,650'Switches with passive bootstrap of control signal'20106,859,075'High-speed output buffer'20056,703,907'Circuit technique for increasing effective inductance of differential transmission lines'20046,667,490'Method and system for generating a memory cell'20036,509,859'Method and system for quantizing an analog signal'20036,490,193'Forming and storing data in a memory cell'20026,456,214'High-speed comparator utilizing resonant tunneling diodes and associated method'20026,252,430'Latching comparator utilizing resonant tunneling diodes and associated method'20016,150,242'Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode'20005,953,249'Memory cell having negative differential resistance devices'19995,883,829'Memory cell having negative differential resistance devices'19995,646,884'Electrical data storage device'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2000Patents assigned to TEXAS INSTRUMENTS INC (4)· patent assignee history
1997–1999Based in Dallas, TX, US· patent location history
2000–2005Based in Newbury Park, CA, US· patent location history
2001–2003Patents assigned to RAYTHEON CO (5)· patent assignee history
2004–2005Patents assigned to INPHI CORP (2)· patent assignee history
2010–2016Patents assigned to QUALCOMM INC (4)· patent assignee history
2010–2020Based in Carlsbad, CA, US· patent location history
2015–2020Patents assigned to TERADYNE INC (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TERADYNE INC | 6 | 2015–2020 |
| RAYTHEON CO | 5 | 2001–2003 |
| QUALCOMM INC | 4 | 2010–2016 |
| TEXAS INSTRUMENTS INC | 4 | 1997–2000 |
| INPHI CORP | 2 | 2004–2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Carlsbad, California, US | 10 | 2010–2020 |
| Newbury Park, California, US | 8 | 2000–2005 |
| Dallas, Texas, US | 3 | 1997–1999 |