Inventor

Donghun Lee

Inventor

Anyang-si, KR

Overview

3→

Patents

2018–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B23Kprimary

B23KSoldering or unsoldering11%

C22CAlloys11%

G06FElectric digital data processing11%

G11CStatic stores11%

H01LSemiconductor devices11%

H10BElectronic memory devices11%

H10DInorganic electric semiconductor devices11%

Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use11%

Y10TTechnical subjects covered by former us classification11%

PatentTitleYear

11,114,447SRAM device provided with a plurality of sheets serving as a channel region2021 11,062,744Memory device performing ZQ calibration, memory system, and operation method of memory device2021 10,040,147Low-melting iron-based filler alloys2018

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2018Patents assigned to LEE DONGMYOUNG (1)· patent assignee history

2018Patents assigned to UNIV CASE WESTERN RESERVE (1)· patent assignee history

2018Patents assigned to WELSCH GERHARD E (1)· patent assignee history

2018Based in Cleveland, OH, US· patent location history

2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (2)· patent assignee history

2021Based in Anyang-si, KR· patent location history

2021Based in Suwon-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	2	2021
LEE DONGMYOUNGself	1	2018
UNIV CASE WESTERN RESERVE	1	2018
WELSCH GERHARD E	1	2018

Locations

Location	Patents	Span
Anyang-si, KR	1	2021
Suwon-si, KR	1	2021
Cleveland, OH, US	1	2018