Inventor

Min-Soo Cho

Inventor
Seongnam, KR

Overview

22→
Patents
1992–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices38%
H10DInorganic electric semiconductor devices19%
G11CStatic stores14%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
F16MFrames, casings or beds of engines, machines or apparatus, not specific to engines, machines or apparatus provided for elsewhere3%
G03GElectrography3%
G06FElectric digital data processing3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
H03KPulse technique3%
PatentTitleYear
10,634,940Method for producing curved display202010,353,229Method for producing curved display20199,705,401'Buck-boost converters and power management integrated circuits including the same'20178,854,348'Negative level shifters'20147,183,154'Nonvolatile memory cells having split gate structure and methods of fabricating the same'20077,180,124'Nonvolatile memory cells having split gate structure and methods of fabricating the same'20076,867,082'Nonvolatile memory cells having split gate structure and methods of fabricating the same'20056,818,509'Methods of fabricating electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates'20046,803,276'Semiconductor device having a flash memory cell and fabrication method thereof'20046,800,525'Method of manufacturing split gate flash memory device'20046,784,476'Semiconductor device having a flash memory cell and fabrication method thereof'20046,753,571'Nonvolatile memory cells having split gate structure and methods of fabricating the same'20046,730,565'Method of forming flash memory'20046,724,661'Erasing method in non-volatile memory device'20046,716,699'Method for manufacturing flash memory device'20046,683,340'Split gate flash memory'20046,649,471'Method of planarizing non-volatile memory device'20036,524,915'Split-gate flash memory and method of manufacturing the same'20036,483,145'Electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates'20025,946,528'Liquid electrophotographic printer'19995,680,176'Apparatus for controlling caption display on a wide aspect ratio'19975,124,805'Remote control operated moving television receiver'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–1997Patents assigned to DAEWOO ELECTRONICS CO LTD (2)· patent assignee history
1992–2020Based in Seoul, KR· patent location history
1999–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (18)· patent assignee history
2002–2004Based in Kyungki-do, KR· patent location history
2003–2004Based in Sungnam, KR· patent location history
2004–2007Based in Seongnam, KR· patent location history
2014Patents assigned to CHO MIN-SOO (1)· patent assignee history
2014–2017Based in Yongin-si, KR· patent location history
2019–2020Patents assigned to EFFINET SYSTEMS INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD181999–2017
DAEWOO ELECTRONICS CO LTD21992–1997
EFFINET SYSTEMS INC22019–2020
CHO MIN-SOOself12014
Locations
LocationPatentsSpan
Seongnam, KR52004–2007
Seoul, KR41992–2020
Kyungki-do, KR42002–2004
Sungnam, KR32003–2004
Yongin-si, KR22014–2017