Inventor
Hans-Jörg Osten
Inventor
Muellrose, DE
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices57%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1043%
PatentTitleYear
7,196,382'Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer'20077,019,341'Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer'20066,800,881'Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area'20046,750,484'Silicon germanium hetero bipolar transistor'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2007Patents assigned to IHP GMBH (3)· patent assignee history
2004Patents assigned to NOKIA CORP (1)· patent assignee history
2004–2006Based in Muellrose, DE· patent location history
2007Based in Frankfurt am Main, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IHP GMBH | 3 | 2004–2007 |
| NOKIA CORP | 1 | 2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Muellrose, DE | 3 | 2004–2006 |
| Frankfurt am Main, DE | 1 | 2007 |