Inventor
TE-YANG LAI
Inventor
TW
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
B82YSpecific uses or applications of nanostructures8%
H10BElectronic memory devices2%
PatentTitleYear
12,598,784Semiconductor device having doped gate dielectric layer and method for forming the same202612,588,231Method of gap filling for semiconductor device202612,568,662Semiconductor devices and methods of forming the same202612,501,689Nanostructure field-effect transistor device and method of forming202512,417,918Semiconductor device having doped gate dielectric layer and method for forming the same202512,387,935Dipole-engineered high-k gate dielectric and method forming same202512,382,671Semiconductor structure and manufacturing method for the semiconductor structure202512,322,595Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture202512,300,738Semiconductor device and manufacturing method for the semiconductor device202512,243,932Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202512,136,659Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202412,125,706Semiconductor device and method of manufacture202412,033,853Semiconductor devices and methods of manufacture202412,020,941Dipole-engineered high-k gate dielectric and method forming same202412,015,066Triple layer high-k gate dielectric stack for workfunction engineering202411,848,370Semiconductor device and manufacturing method for the semiconductor device202311,824,104Method of gap filling for semiconductor device202311,823,894Semiconductor devices and methods of manufacture202311,817,489Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202311,791,216Nanostructure field-effect transistor device and method of forming202311,784,052Dipole-engineered high-k gate dielectric and method forming same202311,777,017Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202311,777,031Semiconductor structure and manufacturing method for the semiconductor structure202311,710,665Semiconductor device and method of manufacture202311,309,398Semiconductor device and manufacturing method for the semiconductor device202211,264,489Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202211,257,950Semiconductor structure and manufacturing method for the semiconductor structure2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (27)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 27 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 27 | 2022–2026 |