LexDanaLexDanabeta
Inventor

Tadashi Kai

Inventor
Tokyo, JP

Overview

101→
Patents
1986–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 101 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for23%
G11CStatic stores18%
H10BElectronic memory devices17%
H01LSemiconductor devices11%
B82YSpecific uses or applications of nanostructures6%
H01FMagnets6%
G11BInformation storage based on relative movement between record carrier and transducer5%
Y10TTechnical subjects covered by former us classification3%
G01RMeasuring electric variables3%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
11,133,456Magnetic storage device202111,094,743Magnetic memory device202110,985,209Nonvolatile storage device202110,978,636Magnetic storage device202110,707,269Semiconductor storage device202010,707,356Magnetic memory device and manufacturing method of the same202010,573,805Magnetic memory device202010,186,656Magnetoresistive element and magnetic memory201910,043,968Electronic device201810,026,891Magnetoresistive element20189,780,298'Magnetoresistive element'20179,720,828'Electronic device'20179,647,034'Magnetoresistive memory device and manufacturing method of the same'20179,640,752'Magnetoresistive element'20179,590,174'Magnetoresistive memory device and manufacturing method of the same'20179,406,871'Magnetoresistive element and method of manufacturing the same'20169,385,304'Magnetic memory and method of manufacturing the same'20169,373,776'Magnetoresistive element and magnetic memory using the same'20169,368,717'Magnetoresistive element and method for manufacturing the same'20169,312,475'Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element'20169,312,477'Semiconductor storage device with magnetoresistive element'20169,269,890'Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer'20169,236,563'Magnetic memory device and method of manufacturing the magnetic memory device'20169,231,196'Magnetoresistive element and method of manufacturing the same'20169,219,227'Magnetoresistive element and magnetic memory'20159,184,374'Magnetoresistive element'20159,178,133'Magnetoresistive element using specific underlayer material'20159,178,134'Magnetoresistive element and method of manufacturing the same'20159,178,137'Magnetoresistive element and magnetic memory'20159,165,585'Magnetoresistive element including a nitrogen-containing buffer layer'20159,153,770'Magnetoresistive element and magnetic memory'20159,123,879'Magnetoresistive element and method of manufacturing the same'20159,087,980'Magnetoresistive element and magnetic memory'20159,018,719'Magnetoresistive element and magnetic memory'20158,953,369'Magnetoresistive element and magnetic memory using the same'20158,946,837'Semiconductor storage device with magnetoresistive element'20158,895,162'Magnetoresistive element and magnetic memory'20148,750,030'Magnetoresistive element and magnetic random access memory'20148,750,029'Magnetoresistive effect element and magnetic memory'20148,710,604'Magnetoresistive element and manufacturing method of the same'20148,705,269'Magnetoresistive element and magnetic memory'20148,680,632'Magnetoresistive element and magnetic memory'20148,669,628'Magnetoresistive element and magnetic memory using the same'20148,670,268'Magnetoresistive element and magnetic memory using the same'20148,665,639'Magnetoresistive element and magnetic memory'20148,659,103'Magnetoresistive element and magnetic memory using the same'20148,547,737'Magnetoresistive element and magnetic memory'20138,547,662'Magnetic recording head and magnetic recording apparatus'20138,530,987'Magnetic memory including a magnetoresistive element'20138,530,887'Magnetoresistive element, method of manufacturing the same, and magnetic memory'20138,502,331'Magnetoresistive effect element, magnetic memory'20138,400,734'Magnetic recording head and magnetic recording apparatus'20138,378,437'Magnetoresistive effect element and magnetic random access memory'20138,363,462'Magnetoresistive element'20138,349,622'Magneto-resistive element'20138,305,801'Magnetoresistive element and magnetic memory'20128,295,009'Magnetic recording head and magnetic recording apparatus'20128,279,663'Magnetoresistance effect element and magnetic random access memory'20128,238,060'Magnetic recording head and magnetic recording apparatus'20128,223,533'Magnetoresistive effect device and magnetic memory'20128,208,292'Magnetoresistive element and magnetic memory'20128,169,817'Magnetoresistive device and magnetic random access memory'20128,107,281'Magnetoresistive element and magnetic memory'20128,098,514'Magnetoresistive element and magnetic memory'20128,036,025'Magnetoresistive element'20118,014,193'Magnetoresistance effect element and magnetic random access memory'20118,009,465'Magnetoresistive element'20117,957,098'Magnetic recording head and magnetic recording apparatus'20117,924,607'Magnetoresistance effect element and magnetoresistive random access memory using the same'20117,920,361'Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc'20117,875,903'Magnetic memory device'20117,848,059'Magnetoresistive effect device and magnetic random access memory using the same'20107,663,197'Magnetoresistive element'20107,599,156'Magnetoresistive element having specially shaped ferromagnetic layer'20097,592,189'MRAM and method of manufacturing the same'20097,525,837'Magnetoresistive effect element and magnetic memory'20097,518,907'Magnetoresistive element'20097,518,906'Magneto-resistive element'20097,470,963'Magnetoresistive element and magnetic memory'20087,414,880'Magnetoresistive effect element and magnetic memory'20087,411,263'Magnetic memory device'20087,372,648'Optically-assisted magnetic recording head and optically-assisted magnetic recording apparatus'20087,355,884'Magnetoresistive element'20087,330,335'Magnetic recording medium, magnetic recording apparatus and magnetic recording method'20087,326,982'MRAM and method of manufacturing the same'20087,245,524'Magnetic memory device and write method of magnetic memory device'20077,190,613'Magnetic random access memory device having thermal agitation property and high write efficiency'20077,084,447'Magnetic random access memory having magnetoresistive element'20067,054,087'Magnetic recording-reproducing apparatus'20066,982,845'Magnetic recording apparatus and magnetic recording method'20066,972,923'Magnetic recording medium and magnetic recording/reproducing apparatus using the same'20056,949,779'Magnetoresistive element and magnetic memory'20056,930,847'Magnetic recording-reproducing apparatus'20056,881,495'Magnetic recording medium including functional and recording layers orthogonally exchange coupled'20056,830,824'Magnetic recording medium with multiple magnetic layers capable of being exchange coupled at elevated temperatures and magnetic recording apparatus'20046,795,380'Optically-assisted magnetic recording head and optically-assisted magnetic recording apparatus'20046,258,259'Iron sulfide and process for producing the same'20016,056,935'Iron sulfide and process for producing the same'20005,302,762'Method for hydrating a cycloolefin'19944,661,237'Process for thermal cracking of carbonaceous substances which increases gasoline fraction and light oil conversions'19874,627,968'Synthesis of crystalline aluminosilicate with alkylurea or alkylthiourea'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2020Based in Tokyo, JP· patent location history
2004–2017Patents assigned to TOSHIBA KK (79)· patent assignee history
2004–2009Based in Kawasaki, JP· patent location history
2004–2008Based in Kanagawa, JP· patent location history
2012–2017Patents assigned to KAI TADASHI (42)· patent assignee history
2012–2016Patents assigned to YODA HIROAKI (28)· patent assignee history
2012–2016Patents assigned to NAGASE TOSHIHIKO (23)· patent assignee history
2012–2016Patents assigned to NAKAYAMA MASAHIKO (19)· patent assignee history
2015–2017Based in Seoul, KR· patent location history
2019–2021Based in Yokohama-shi, Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK792004–2017
KAI TADASHIself422012–2017
YODA HIROAKI282012–2016
NAGASE TOSHIHIKO232012–2016
NAKAYAMA MASAHIKO192012–2016
Locations
LocationPatentsSpan
Tokyo, JP681987–2020
Seoul, KR92015–2017
Kawasaki, JP82004–2009
Kanagawa, JP72004–2008
Yokohama-shi, Kanagawa, JP52019–2021