Inventor
JER-FU WANG
Inventor
TW
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices22%
H10DInorganic electric semiconductor devices18%
G11CStatic stores14%
H01LSemiconductor devices14%
H10NElectric solid-state devices not otherwise provided for14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
G06NComputing arrangements based on specific computational models4%
H03MCoding2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
12,593,492Electronic device and method for manufacturing the same202612,593,496Multiple threshold voltage implementation through lanthanum incorporation202612,527,081Semiconductor device and logic device202612,475,942Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereof202512,426,519Memory devices202512,424,492Self-aligned contact for embedded memory202512,402,327Memory devices and methods of forming the same202512,396,1763T memory with enhanced speed of operation and data retention202512,356,600SRAM memory cell device comprising ferroelectric access and storage transistors202512,243,619Memory array structure202512,069,970Memory device, method for configuring memory cell in N-bit memory unit, and memory array202412,035,532Memory array and memory device202412,022,752Methods of forming memory devices202411,929,115Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereof202411,903,334Memory devices and methods of forming the same202411,854,594Data processing method, data processing circuit, and computing apparatus202311,664,279Multiple threshold voltage implementation through lanthanum incorporation202311,605,779Memory cell, method of forming the same, and semiconductor die2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (18)· patent assignee history
2023Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY LTPD (1)· patent assignee history
2023–2026Based in TW· patent location history
2025Patents assigned to TAIWAN SEMICONDUCTOR MANUFATURING COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 18 | 2023–2026 |
| TAIWAN SEMICONDUCTOR MANUFATURING COMPANY LTD | 1 | 2025 |
| TAIWAN SEMICONDUCTOR MFG COMPANY LTPD | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 18 | 2023–2026 |