Inventor

Tzer-Perng Chen

Inventor

Hsinchu, TW

Overview

1990–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers48%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%

H01LSemiconductor devices13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

B82YSpecific uses or applications of nanostructures3%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

C30BSingle-crystal growth1%

F21KNon-electric light sources using luminescence1%

PatentTitleYear

10,686,106Optoelectronic element2020 10,529,898Optoelectronic element2020 10,319,886LED assembly for omnidirectional light appliances2019 9,947,839LED assembly2018 9,893,244'Optoelectronic element'2018 9,741,905'Optoelectronic element'2017 9,559,229'Multi-junction solar cell'2017 9,546,762'LED assembly'2017 9,502,622'LED assembly'2016 9,362,456'Optoelectronic semiconductor device'2016 9,142,740'Optoelectronic element and manufacturing method thereof'2015 9,024,451'Integrated lighting apparatus and method of manufacturing the same'2015 9,018,655'Light emitting apparatus and manufacture method thereof'2015 9,000,461'Optoelectronic element and manufacturing method thereof'2015 8,816,386'Light emitting device and manufacture method thereof'2014 8,816,508'Integrated lighting apparatus having a control device and method of manufacturing the same'2014 RE044429'Light-emitting semiconductor device having enhanced brightness'2013 8,274,156'Optoelectronic semiconductor device'2012 8,049,226'Light-emitting device'2011 8,022,425'Semiconductor device'2011 7,335,926'Package structure for light emitting diode and method thereof'2008 7,335,522'Package structure for light emitting diode and method thereof'2008 7,067,340'Flip-chip light emitting diode and fabricating method thereof'2006 7,037,741'Compound semiconductor optoelectronic device'2006 7,030,423'Package structure for light emitting diode and method thereof'2006 7,018,859'Method of fabricating AlGaInP light-emitting diode and structure thereof'2006 7,012,281'Light emitting diode device and manufacturing method'2006 6,984,852'Package structure for light emitting diode and method thereof'2006 6,921,924'Semiconductor light-emitting device'2005 6,869,820'High efficiency light emitting diode and method of making the same'2005 6,861,677'Package of lightemitting diode with protective element'2005 6,812,067'Method for integrating compound semiconductor with substrate or high thermal conductivity'2004 6,797,987'High efficiency light emitting diode and method of making the same'2004 6,786,390'LED stack manufacturing method and its structure thereof'2004 6,781,160'Semiconductor light emitting device and method for manufacturing the same'2004 6,762,069'Method for manufacturing light-emitting element on non-transparent substrate'2004 6,709,883'Light emitting diode and method of making the same'2004 6,693,306'Structure of a light emitting diode and method of making the same'2004 6,682,950'Light emitting diode and method of making the same'2004 6,661,028'Interface texturing for light-emitting device'2003 6,649,437'Method of manufacturing high-power light emitting diodes'2003 6,599,768'Surface mounting method for high power light emitting diode'2003 6,586,875'Light emitting diode with low-temperature solder layer'2003 6,583,443'Light emitting diode and method of making the same'2003 6,552,369'Light emitting diode and fabricating method thereof'2003 6,489,250'Method for cutting group III nitride semiconductor light emitting element'2002 6,458,612'Method of fabricating high efficiency light-emitting diode with a transparent substrate'2002 6,455,343'Method of manufacturing light emitting diode with current blocking structure'2002 6,429,460'Highly luminous light emitting device'2002 6,410,348'Interface texturing for light-emitting device'2002 6,380,564'Semiconductor light emitting device'2002 6,319,778'Method of making light emitting diode'2001 6,066,862'High brightness light emitting diode'2000 5,944,410'Structure of a laser indicator'1999 5,661,742'Light emitting diode structure'1997 5,565,694'Light emitting diode with current blocking layer'1996 5,300,791'Light emitting diode'1994 4,902,376'Modified horizontal bridgman method for growing GaAs single crystal'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2020Based in Hsinchu, TW· patent location history

2000–2006Patents assigned to UNITED EPITAXY CO LTD (23)· patent assignee history

2002Based in Hsin Chu, TW· patent location history

2006–2020Patents assigned to EPISTAR CORP (23)· patent assignee history

2012–2017Patents assigned to CHEN TZER-PERNG (5)· patent assignee history

2016–2019Patents assigned to HUGA OPTOTECH INC (4)· patent assignee history

2016–2019Patents assigned to INTERLIGHT OPTOTECH CORP (4)· patent assignee history

2016–2019Based in Yangmei Taoyuan, TW· patent location history

2017Based in Taoyuan County, TW· patent location history

2020Based in Hs, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
EPISTAR CORP	23	2006–2020
UNITED EPITAXY CO LTD	23	2000–2006
CHEN TZER-PERNGself	5	2012–2017
HUGA OPTOTECH INC	4	2016–2019
INTERLIGHT OPTOTECH CORP	4	2016–2019

Locations

Location	Patents	Span
Hsinchu, TW	51	1990–2020
Yangmei Taoyuan, TW	3	2016–2019
Hs, TW	1	2020
Taoyuan County, TW	1	2017
Hsin Chu, TW	1	2002