Inventor
HSIANG-PI CHANG
Inventor
TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
B82YSpecific uses or applications of nanostructures12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
12,598,797Gate spacers in semiconductor devices202612,588,234Semiconductor devices with implanted STI regions and methods of forming the same202612,520,532Semiconductor devices and methods of manufacturing thereof202612,513,951Gate structures in semiconductor devices202512,495,566Semiconductor device having strained channel and method for manufacturing the same202512,490,467Transistor and semiconductor device with multiple threshold voltages and fabrication method thereof202512,477,784Dipoles in semiconductor devices202512,426,292Semiconductor device with tunable threshold voltage and method for manufacturing the same202512,406,859Gate structures in semiconductor devices202512,402,394Semiconductor structure202512,369,384Semiconductor device structure including dielectric region with plurality of different oxidation regions202512,166,074Gate structure in semiconductor device and method of forming the same202412,148,843Semiconductor device with treated interfacial layer on silicon germanium202411,978,674Semiconductor device structure and methods of forming the same202411,908,702Gate structures in semiconductor devices202411,894,461Dipoles in semiconductor devices202411,842,927Semiconductor structure202311,710,779Semiconductor device including interface layer and method of fabricating thereof202311,688,812Semiconductor device with treated interfacial layer on silicon germanium202311,581,416Gate structures in semiconductor devices2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (19)· patent assignee history
2023–2026Based in TW· patent location history
2026Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 19 | 2023–2026 |
| TAIWAN SEMICONDUCTOR MFG COMPANY LTD | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 20 | 2023–2026 |