Inventor
Vladislav Vassiliev
Inventor
Singapore, SG
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
B41JTypewriters8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
PatentTitleYear
6,583,069'Method of silicon oxide and silicon glass films deposition'20036,500,771'Method of high-density plasma boron-containing silicate glass film deposition'20026,355,581'Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capability'20026,197,705'Method of silicon oxide and silicon glass films deposition'20016,180,490'Method of filling shallow trenches'20016,027,982'Method to form shallow trench isolation structures with improved isolation fill and surface planarity'20005,876,798'Method of fluorinated silicon oxide film deposition'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2002Patents assigned to CHARTERED SEMICONDUCTOR MFG (6)· patent assignee history
1999–2003Based in Singapore, SG· patent location history
2003Patents assigned to CHARTERED SEMICONDUCTOR MFG CO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHARTERED SEMICONDUCTOR MFG | 6 | 1999–2002 |
| CHARTERED SEMICONDUCTOR MFG CO | 1 | 2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Singapore, SG | 7 | 1999–2003 |