Inventor
SEN-HONG SYUE
Inventor
TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H01LSemiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
B82YSpecific uses or applications of nanostructures12%
H10BElectronic memory devices3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
C30BSingle-crystal growth1%
PatentTitleYear
12,527,019Method of manufacturing semiconductor devices having metal gate structure and semiconductor devices202612,489,002Annealing apparatus and method of operating the same202512,469,742Shallow trench isolation forming method and structures resulting therefrom202512,419,100Transistor isolation regions and methods of forming the same202512,389,662Formation method of shallow trench isolation202512,369,394Semiconductor device and method of forming same202512,336,249Gate spacer and formation method thereof202512,324,208Method for manufacturing semiconductor device including annealing treatment of inner spacer layer202512,183,573Device and method for high pressure anneal202412,040,382Method of forming a nano-FET semiconductor device202411,996,412Semiconductor device and method of forming same202411,978,676Semiconductor structure and method of forming the same202411,923,432Semiconductor device and method202411,923,235Method for forming semiconductor device having isolation structures with different thicknesses202411,908,751Transistor isolation regions and methods of forming the same202411,901,218Shallow trench isolation forming method and structures resulting therefrom202411,854,800Device and method for high pressure anneal202311,640,986Implantation and annealing for semiconductor device202311,605,635Semiconductor device and method of forming same202311,545,559Semiconductor device and method202311,450,555Method for forming semiconductor device having isolation structures with different thicknesses202211,302,567Shallow trench isolation forming method and structures resulting therefrom2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (22)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 22 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 22 | 2022–2026 |