Inventor
Yao-Tsung Huang
Inventor
Kaohsiung, TW
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
H10NElectric solid-state devices not otherwise provided for11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
C30BSingle-crystal growth5%
C01GCompounds containing metals not covered by subclasses c01d or c01f3%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds3%
C04BLime, magnesia3%
PatentTitleYear
10,790,380Semiconductor chip and manufacturing method thereof20209,887,290'Silicon germanium source/drain regions'20189,508,849'Device having source/drain regions regrown from un-relaxed silicon layer'20169,034,102'Method of fabricating hybrid orientation substrate and structure of the same'20158,962,400'In-situ doping of arsenic for source and drain epitaxy'20158,866,188'Semiconductor devices and methods of manufacture thereof'20148,785,285'Semiconductor devices and methods of manufacture thereof'20148,618,556'FinFET design and method of fabricating same'20138,609,518'Re-growing source/drain regions from un-relaxed silicon layer'20137,759,202'Method for forming semiconductor device with gates of different materials'20107,682,932'Method for fabricating a hybrid orientation substrate'20107,659,189'Method for forming fully silicided gate electrode in a semiconductor device'20107,608,522'Method for fabricating a hybrid orientation substrate'20095,376,623'Method to enhance critical temperature of thallium-based superconductors'19945,270,295'Process for preparing superconductors and compositions useful therein'19935,071,829'Gel method for preparing high purity Bi-based 110K superconductor using oxalic acid'19915,004,723'Preparation of superconducting epitaxial film using the method of liquid-phase epitaxial growth'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1994Patents assigned to IND TECH RES INST (4)· patent assignee history
1991–2020Based in Hsinchu, TW· patent location history
1991–1993Based in Tainan, TW· patent location history
2009–2015Patents assigned to UNITED MICROELECTRONICS CORP (5)· patent assignee history
2009Based in Hsin Chu Hsien, TW· patent location history
2010–2018Based in Kaohsiung, TW· patent location history
2013–2015Patents assigned to HUANG YAO-TSUNG (5)· patent assignee history
2013–2015Patents assigned to TAIWAN SEMICONDUCTOR MFG (5)· patent assignee history
2013–2015Patents assigned to KO CHIH-HSIN (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HUANG YAO-TSUNGself | 5 | 2013–2015 |
| TAIWAN SEMICONDUCTOR MFG | 5 | 2013–2015 |
| UNITED MICROELECTRONICS CORP | 5 | 2009–2015 |
| IND TECH RES INST | 4 | 1991–1994 |
| KO CHIH-HSIN | 4 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kaohsiung, TW | 11 | 2010–2018 |
| Hsinchu, TW | 3 | 1991–2020 |
| Tainan, TW | 2 | 1991–1993 |
| Hsin Chu Hsien, TW | 1 | 2009 |