Inventor
Soon-Oh Park
Inventor
Suwon-si, KR
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
H10NElectric solid-state devices not otherwise provided for26%
H01LSemiconductor devices15%
H10DInorganic electric semiconductor devices10%
G11CStatic stores5%
H04MTelephonic communication3%
C23CCoating metallic material1%
G06FElectric digital data processing1%
G11BInformation storage based on relative movement between record carrier and transducer1%
H01QAntennas, i.e. radio aerials1%
PatentTitleYear
10,546,894Memory device202010,516,204Electronic device including support member having antenna radiator201910,468,594Variable resistance memory devices201910,403,681Memory device including a variable resistance material layer201910,397,764Electronic device and method of controlling wireless communication thereof201910,388,867Variable resistance memory devices201910,374,008Memory device and method of manufacturing the same201910,249,816Magnetoresistive random access memory device201910,224,371Memory device201910,026,890Magnetoresistive random access memory device and method of manufacturing the same20189,780,144'Memory device and method of manufacturing the same'20179,343,672'Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices'20168,865,558'Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device'20148,718,308'Reproducing apparatus and method for automatically converting output mode based on movements of casing'20148,320,170'Multi-bit phase change memory devices'20128,299,450'Non-volatile memory device including phase-change material'20128,222,625'Non-volatile memory device including phase-change material'20128,187,918'Methods of forming multi-level cell of semiconductor memory'20128,133,758'Method of fabricating phase-change memory device having TiC layer'20128,026,543'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'20117,563,639'Phase-changeable memory device and method of manufacturing the same'20097,482,616'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'20096,686,620'FRAM and method of fabricating the same'20046,025,223'Methods of forming high dielectric capacitors'20005,774,327'High dielectric capacitors'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
1998–2004Based in Kyungki-do, KR· patent location history
2009–2019Based in Gyeonggi-do, KR· patent location history
2012–2016Patents assigned to PARK SOON-OH (7)· patent assignee history
2012Patents assigned to AHN DONG-HO (3)· patent assignee history
2012–2014Patents assigned to OH JIN-HO (3)· patent assignee history
2012Patents assigned to HORII HIDEKI (2)· patent assignee history
2012–2020Based in Suwon-si, KR· patent location history
2014Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 25 | 1998–2020 |
| PARK SOON-OHself | 7 | 2012–2016 |
| AHN DONG-HO | 3 | 2012 |
| OH JIN-HO | 3 | 2012–2014 |
| HORII HIDEKI | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Suwon-si, KR | 17 | 2012–2020 |
| Gyeonggi-do, KR | 4 | 2009–2019 |
| Kyungki-do, KR | 3 | 1998–2004 |
| Yongin-si, KR | 1 | 2014 |