Inventor
Ganesh Samudra
Inventor
Singapore, SG
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
PatentTitleYear
7,892,905'Formation of strained Si channel and Si1-xGex source/drain structures using laser annealing'20117,313,780'System and method for designing semiconductor photomasks'20077,238,581'Method of manufacturing a semiconductor device with a strained channel'20077,091,092'Process flow for a performance enhanced MOSFET with self-aligned, recessed channel'20066,853,033'Power MOSFET having enhanced breakdown voltage'20056,391,720'Process flow for a performance enhanced MOSFET with self-aligned, recessed channel'20026,284,606'Process to achieve uniform groove depth in a silicon substrate'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2007Patents assigned to CHARTERED SEMICONDUCTOR MFG (4)· patent assignee history
2001–2011Based in Singapore, SG· patent location history
2002–2006Patents assigned to UNIV SINGAPORE (3)· patent assignee history
2011Patents assigned to GLOBALFOUNDRIES SG PTE LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHARTERED SEMICONDUCTOR MFG | 4 | 2001–2007 |
| UNIV SINGAPORE | 3 | 2002–2006 |
| GLOBALFOUNDRIES SG PTE LTD | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Singapore, SG | 7 | 2001–2011 |