Inventor
Andrew J. Purdes
Inventor
Garland, TX, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material18%
C30BSingle-crystal growth16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
B82YSpecific uses or applications of nanostructures6%
H01JElectric discharge tubes or discharge lamps6%
B24BMachines, devices, or processes for grinding or polishing4%
H10DInorganic electric semiconductor devices4%
H10NElectric solid-state devices not otherwise provided for4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
6,139,483'Method of forming lateral resonant tunneling devices'20005,952,059'Forming a piezoelectric layer with improved texture'19995,935,641'Method of forming a piezoelectric layer with improved texture'19995,556,462'Growth method by repeatedly measuring flux in MBE chamber'19965,399,521'Method of semiconductor layer growth by MBE'19955,175,019'Method for depositing a thin film'19925,170,329'Stress free chip mount and method of manufacture'19925,114,696'Diamond growth method'19925,082,522'Method for forming patterned diamond thin films'19925,006,203'Diamond growth method'19914,878,989'Chemical beam epitaxy system'19894,830,984'Method for heteroepitaxial growth using tensioning layer on rear substrate surface'19894,699,085'Chemical beam epitaxy system'19874,681,653'Planarized dielectric deposited using plasma enhanced chemical vapor deposition'19874,521,275'Plasma etch chemistry for anisotropic etching of silicon'19854,513,021'Plasma reactor with reduced chamber wall deposition'19854,512,283'Plasma reactor sidewall shield'19854,450,042'Plasma etch chemistry for anisotropic etching of silicon'1984Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1984–2000Patents assigned to TEXAS INSTRUMENTS INC (18)· patent assignee history
1984–2000Based in Garland, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 18 | 1984–2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Garland, Texas, US | 18 | 1984–2000 |