Inventor
WEI CHUANG WU
Inventor
TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation40%
H01LSemiconductor devices38%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10DInorganic electric semiconductor devices6%
H04NPictorial communication, e.g. television4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
12,464,839Vertical gate field effect transistor202512,317,613Self aligned grids in BSI image sensor202512,255,219Image sensor with overlap of backside trench isolation structure and vertical transfer gate202512,191,282Shared pad/bridge layout for a 3D IC202512,154,927Semiconductor structure202412,148,782Composite BSI structure and method of manufacturing the same202412,040,336Semiconductor imaging device having improved dark current performance202411,984,465Multiple deep trench isolation (MDTI) structure for CMOS image sensor202411,948,949Vertical gate field effect transistor202411,862,535Through-substrate-via with reentrant profile202411,791,361Image sensor with overlap of backside trench isolation structure and vertical transfer gate202311,791,357Composite BSI structure and method of manufacturing the same202311,776,985Method of forming self aligned grids in BSI image sensor202311,538,837Semiconductor imaging device having improved dark current performance202211,495,630Multiple deep trench isolation (MDTI) structure for CMOS image sensor202211,437,420Image sensor with overlap of backside trench isolation structure and vertical transfer gate202211,430,823Method for manufacturing semiconductor image sensor device having deep trench isolation202211,404,460Vertical gate field effect transistor202211,342,373Manufacturing method of image sensing device202211,211,419Composite bsi structure and method of manufacturing the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (20)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 20 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 20 | 2021–2025 |