Inventor
TSUN-MIN CHENG
Inventor
TW
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices36%
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G11CStatic stores4%
PatentTitleYear
12,581,638Semiconductor memory device having interface layer between capacitor structures and method of fabricating the same202612,213,303Semiconductor device and method of fabricating the same202512,075,613Buried word line of a dynamic random access memory and method for fabricating the same202411,877,433Storage node contact structure of a memory device202411,799,012Semiconductor device and method for fabricating the same202311,251,187Buried word line of a dynamic random access memory and method for fabricating the same202211,239,243Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same202211,239,241Bit line utilized in DRAM202211,222,784Semiconductor device and method for fabricating the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD (9)· patent assignee history
2022–2024Patents assigned to UNITED MICROELECTRONICS CORP (7)· patent assignee history
2022–2024Based in TW· patent location history
2025–2026Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD | 9 | 2022–2026 |
| UNITED MICROELECTRONICS CORP | 7 | 2022–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 7 | 2022–2024 |
| CN | 2 | 2025–2026 |