Inventor
Ritsuo Takizawa
Inventor
Tokyo, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation33%
H04NPictorial communication, e.g. television22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10DInorganic electric semiconductor devices7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10KOrganic electric solid-state devices4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
H01LSemiconductor devices2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
9,202,847'Solid-state image pickup device having an organic photoelectric conversion film, method for manufacturing the same, and image pickup apparatus'20158,670,054'Solid-state image pickup device with isolated organic photoelectric conversion film portions, method for manufacturing the same, and image pickup apparatus'20148,598,640'Solid-state imaging device'20138,101,999'SOI substrate and method for producing the same, solid-state image pickup device and method for producing the same, and image pickup apparatus'20128,035,708'Solid-state imaging device with an organic photoelectric conversion film and imaging apparatus'20118,017,984'Solid-state imaging device'20117,935,563'Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device'20117,928,487'Solid-state imaging device and driving method of solid-state imaging device'20117,821,093'Solid-state imaging device with biased light shielding film'20107,791,118'Solid-state imaging device'20107,473,977'Method of driving solid state image sensing device'20096,746,939'Production method for solid imaging device'20046,344,092'Epitaxial semiconductor substrate, manufacturing method thereof, manufacturing method of semiconductor device and manufacturing method of solid-state imaging device'20026,342,436'Method of manufacturing semiconductor substrate and method of manufacturing solid-state image-pickup device'20026,140,213'Semiconductor wafer and method of manufacturing same'20005,956,570'Method of manufacturing semiconductor substrate and method of manufacturing solid state imaging device'19995,874,348'Semiconductor wafer and method of manufacturing same'19995,734,195'Semiconductor wafer for epitaxially grown devices having a sub-surface getter region'19985,506,176'Method of making a semiconductor device having a process of hydrogen annealing'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2015Patents assigned to SONY CORP (19)· patent assignee history
1996–2015Based in Tokyo, JP· patent location history
2012–2014Patents assigned to TAKIZAWA RITSUO (3)· patent assignee history
2013Patents assigned to ABE HIDESHI (1)· patent assignee history
2013Patents assigned to HIRATA KIYOSHI (1)· patent assignee history
2013Patents assigned to KARASAWA NOBUHIRO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 19 | 1996–2015 |
| TAKIZAWA RITSUOself | 3 | 2012–2014 |
| ABE HIDESHI | 1 | 2013 |
| HIRATA KIYOSHI | 1 | 2013 |
| KARASAWA NOBUHIRO | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 19 | 1996–2015 |