Inventor
Yunfei GAO
Inventor
US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices20%
H10BElectronic memory devices19%
G11CStatic stores7%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
H04NPictorial communication, e.g. television4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
B82YSpecific uses or applications of nanostructures2%
C07CAcyclic or carbocyclic compounds2%
PatentTitleYear
12,219,758Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies202512,148,774Trench-gate source follower for low-noise scaled pixel202412,142,620Complementary metal-oxide semiconductor (CMOS) image sensors with saddle-gate source follower for imaging pixels202411,910,597Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies202411,908,932Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems202411,830,897Square-gate source-follower for CMOS image sensor pixel202311,813,592Oxygen carrying materials with surface modification for redox-based catalysis and methods of making and uses thereof202311,610,923Ferroelectric-oxide hybrid-gate transistor block for semiconductor imaging sensors202311,600,535Integrated assemblies having conductive material along three of four sides around active regions, and methods of forming integrated assemblies202311,581,317Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies202311,538,809Metal insulator semiconductor (MIS) contact in three dimensional (3D) vertical memory202211,527,620Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material202211,401,674Pile-bottom grouting cavity and method for using same, and cast-in-place pile body and method for constructing same202211,393,928Access devices formed with conductive contacts202211,348,932Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies202211,257,962Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to MICRON TECHNOLOGY INC (10)· patent assignee history
2022Patents assigned to GAO YONGGUANG (1)· patent assignee history
2022Patents assigned to GAO YUNFEI (1)· patent assignee history
2022–2025Based in US· patent location history
2022Based in CN· patent location history
2023–2024Patents assigned to SHENZHEN GOODIX TECH CO LTD (4)· patent assignee history
2023Patents assigned to UNIV NORTH CAROLINA STATE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 10 | 2022–2025 |
| SHENZHEN GOODIX TECH CO LTD | 4 | 2023–2024 |
| GAO YONGGUANG | 1 | 2022 |
| GAO YUNFEIself | 1 | 2022 |
| UNIV NORTH CAROLINA STATE | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 15 | 2022–2025 |
| CN | 1 | 2022 |