Inventor

Myung Gil Kang

Inventor
Suwon-si, KR

Overview

23→
Patents
2015–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10BElectronic memory devices8%
H04BTransmission7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H04WWireless communication networks5%
B82YSpecific uses or applications of nanostructures3%
H03KPulse technique2%
H04JMultiplex communication2%
PatentTitleYear
10,833,085Semiconductor device having a plurality of channel layers and method of manufacturing the same202010,790,368Vertical FET devices including a contact on protruding portions of a substrate202010,778,284Method and apparatus for controlling interference in communication system using multiple antennas202010,665,702Vertical bipolar transistors202010,622,476Vertical field effect transistor having two-dimensional channel structure202010,410,931Fabricating method of nanosheet transistor spacer including inner spacer201910,312,156Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET201910,297,601Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same201910,103,800Method and apparatus for adaptive beam hopping in multi cell multi user communication system201810,056,928Method and apparatus for controlling interference in mobile communication system20189,966,376Semiconductor devices and inverter having the same20189,905,645'Vertical field effect transistor having an elongated channel'20189,870,957'Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET'20189,673,099'Method of fabricating integrated circuit devices'20179,653,551'Field effect transistors including fin structures with different doped regions and semiconductor devices including the same'20179,577,076'Methods of manufacturing semiconductor devices'20179,559,765'Apparatus and method for relieving interference in wireless communication system'20179,520,458'Resistor formed using resistance patterns and semiconductor devices including the same'20169,490,177'Integrated circuit devices including stress proximity effects and methods of fabricating the same'20169,324,850'Integrated circuit devices and fabricating method thereof'20169,252,274'Fin field effect transistors including multiple lattice constants and methods of fabricating the same'20169,014,707'Apparatus and method for hierarchical rate splitting in hierarchical cell communication system'20158,941,155'Fin field effect transistors including multiple lattice constants and methods of fabricating the same'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (23)· patent assignee history
2015–2018Patents assigned to KOREA ADVANCED INST SCI & TECH (4)· patent assignee history
2015Patents assigned to KANG MYUNG GIL (2)· patent assignee history
2015Patents assigned to CHO CHIWON (1)· patent assignee history
2015Patents assigned to CHOI HYUN HO (1)· patent assignee history
2015–2017Based in Seoul, KR· patent location history
2015–2020Based in Daejeon, KR· patent location history
2017–2020Based in Suwon-si, KR· patent location history
2018Based in Cohoes, NY, US· patent location history
2020Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD232015–2020
KOREA ADVANCED INST SCI & TECH42015–2018
KANG MYUNG GILself22015
CHO CHIWON12015
CHOI HYUN HO12015
Locations
LocationPatentsSpan
Suwon-si, KR92017–2020
Seoul, KR72015–2017
Daejeon, KR52015–2020
Hwaseong-si, KR12020
Cohoes, New York, US12018