Inventor

Chang Won Yang

Inventor
Incheon, KR

Overview

21→
Patents
2009–2020
Patent span
Physics
Primary field (CPC G)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores33%
C10JProduction of producer gas, water-gas, synthesis gas from solid carbonaceous material, or mixtures containing these gases9%
Y02PClimate change mitigation technologies in the production or processing of goods9%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry7%
B09BDisposal of solid waste not otherwise provided for7%
C10BDestructive distillation of carbonaceous materials for production of gas, coke, tar, or similar materials7%
F23GCremation furnaces7%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
C10GCracking hydrocarbon oils4%
A62DChemical means for extinguishing fires or for combating or protecting against harmful chemical agents2%
PatentTitleYear
10,533,143Combustor-independent fluidized bed indirect gasification system202010,352,559Gasification apparatus and gasification method20199,601,211'Semiconductor memory device'20179,508,454'Semiconductor memory device and operation method thereof'20169,446,376'Apparatus for pyrolysis using molten metal'20169,416,327'Hybrid gasification system'20169,159,435'Semiconductor memory device having bouncing detection circuit and method of operating the same'20159,156,017'Pyrolysis apparatus using liquid metal'20159,093,169'Nonvolatile semiconductor memory apparatus and data sensing method thereof'20159,013,924'Semiconductor device and operating method thereof'20158,929,155'Semiconductor memory device and method of operating the same'20158,923,055'Semiconductor device and method of operating the same'20148,503,232'Semiconductor memory device and programming method thereof'20138,189,383'Page buffer of non-volatile memory device and programming method of non-volatile memory device'20128,085,602'Page buffer circuit, nonvolatile memory device including the page buffer circuit, and method of operating the nonvolatile memory device'20117,903,466'Memory device and method of operating the same'20117,898,876'Page buffer circuit, nonvolatile memory device including the page buffer circuit, and method of operating the nonvolatile memory device'20117,889,551'Page buffer of non-volatile memory device and programming method of non-volatile memory device'20117,706,190'Method of program-verifying a nonvolatile memory device using subdivided verifications with increasing verify voltages'20107,515,476'Non-volatile memory device and data read method and program verify method of non-volatile memory device'20097,488,110'End-plate for linear motion slider and linear motion slider in use with the end-plate'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2012Patents assigned to HYNIX SEMICONDUCTOR INC (7)· patent assignee history
2009–2017Based in Icheon-si, KR· patent location history
2009Based in Goyang-si, KR· patent location history
2011–2015Patents assigned to YANG CHANG WON (8)· patent assignee history
2011–2020Based in Incheon, KR· patent location history
2011–2016Based in Gyeonggi-do, KR· patent location history
2013–2017Patents assigned to SK HYNIX INC (8)· patent assignee history
2015–2016Patents assigned to KOREA IND TECH INST (3)· patent assignee history
2015Patents assigned to HUH HWANG (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SK HYNIX INC82013–2017
YANG CHANG WONself82011–2015
HYNIX SEMICONDUCTOR INC72009–2012
KOREA IND TECH INST32015–2016
HUH HWANG22015
Locations
LocationPatentsSpan
Incheon, KR72011–2020
Icheon-si, KR72009–2017
Gyeonggi-do, KR62011–2016
Goyang-si, KR12009