Inventor
Shigeki Obayashi
Inventor
Tokyo, JP
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores36%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1031%
H01HElectric switches11%
H01LSemiconductor devices8%
G01KMeasuring temperature6%
H10BElectronic memory devices6%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
10,923,419Semiconductor device and a method of increasing a resistance value of an electric fuse202110,371,582Signal generation circuit and temperature sensor201910,242,733Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage20199,984,744Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage20189,893,013'Semiconductor device and a method of increasing a resistance value of an electric fuse'20189,891,116'Signal generation circuit and temperature sensor'20189,767,893'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20179,508,641'Semiconductor device and a method increasing a resistance value of an electric fuse'20169,496,028'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20169,478,493'Semiconductor device and a method increasing a resistance value of an electric fuse'20169,218,873'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20158,723,291'Semiconductor integrated circuit'20148,681,527'Semiconductor device'20148,630,142'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20148,558,343'Semiconductor device having a fuse element'20138,487,402'Semiconductor device'20138,487,403'Semiconductor device'20138,331,185'Semiconductor device having electrical fuses with less power consumption and interconnection arrangement'20128,218,390'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20128,009,500'Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage'20117,808,076'Semiconductor device'20107,745,905'Semiconductor device and a method of increasing a resistance value of an electric fuse'20107,706,202'Semiconductor device having electrical fuses with less power consumption and interconnection arrangement'20107,502,275'Semiconductor memory device'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2010Patents assigned to RENESAS TECH CORP (4)· patent assignee history
2009–2021Based in Tokyo, JP· patent location history
2012–2021Patents assigned to RENESAS ELECTRONICS CORP (18)· patent assignee history
2012–2014Patents assigned to OBAYASHI SHIGEKI (8)· patent assignee history
2012–2014Patents assigned to IWAMOTO TAKESHI (4)· patent assignee history
2012–2014Patents assigned to KONO KAZUSHI (4)· patent assignee history
2014–2018Based in Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 18 | 2012–2021 |
| OBAYASHI SHIGEKIself | 8 | 2012–2014 |
| IWAMOTO TAKESHI | 4 | 2012–2014 |
| KONO KAZUSHI | 4 | 2012–2014 |
| RENESAS TECH CORP | 4 | 2009–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 22 | 2009–2021 |
| Kanagawa, JP | 2 | 2014–2018 |