Inventor
Qiming Li
Inventor
Sugar Land, TX, US
Overview
Patents· 76 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G01Vprimary
G01VGeophysics16%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
H01LSemiconductor devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
E21BEarth or rock drilling7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
C30BSingle-crystal growth3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H04WWireless communication networks3%
H04LTransmission of digital information, e.g. telegraphic communication3%
PatentTitleYear
10,879,217Multi-color LED pixel unit and micro-LED display panel202010,849,188Data transmission device, method, and system202010,782,605Light tunnels and methods for making same202010,716,041Access network device, user equipment, communications system, and communication method202010,700,048Projection display system202010,658,346Making semiconductor devices by stacking strata of micro LEDs202010,622,343Semiconductor apparatus and method of manufacturing the same202010,600,767Making semiconductor devices by stacking strata of micro LEDS202010,578,570Test system of thermoelectric module and test method for thermoelectric module202010,574,485Channel estimation method, base station, user equipment, and system202010,524,174Access network device, user equipment, communications system, and communication method201910,490,701Light emitting diode chip201910,412,806Multi-color micro-LED array light source201910,404,516Data demodulation method, user equipment, base station, and system201910,325,893Mass transfer of micro structures using adhesives201910,304,375Micro display panels with integrated micro-reflectors201910,304,811Light-emitting diode display panel with micro lens array201910,283,346Sapphire substrate recycling method201910,210,605Method and device for detecting boundary of region on display motherboard201910,177,127Semiconductor apparatus and method of manufacturing the same201910,079,264Semiconductor devices with integrated thin-film transistor circuitry201810,078,158Manufacturing display panels with integrated micro lens array201810,068,888Making semiconductor devices with alignment bonding and substrate removal201810,032,757Projection display system201810,027,525Data demodulation method, user equipment, base station, and system201810,018,746Restorable antennae apparatus and system for well logging20189,977,152Display panels with integrated micro lens array20189,880,313'Reconfigurable well logging system'20189,846,256Interactive display of results obtained from the inversion of logging data20179,842,963'GaN-based LED epitaxial structure and preparation method thereof'20179,766,362'System and method for using dual telemetry'2017D0795822'LED chip'20179,735,316'Method for manufacturing high voltage LED flip chip'2017D0794582'LED chip'20179,698,305'High voltage LED flip chip'20179,698,197'High-voltage flip LED chip and manufacturing method thereof'20179,213,124'Restorable antennae apparatus and system for well logging'20159,213,125'Well logging apparatus and system'20159,057,797'Multilevel workflow method to extract resistivity anisotropy data from three-dimensional induction measurements'20159,020,005'Multicolor photonic crystal laser array'20158,932,403'Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces'20158,895,337'Method of fabricating vertically aligned group III-V nanowires'20148,841,913'Determining formation parameters using electromagnetic coupling components'20148,785,905'Amber light-emitting diode comprising a group III-nitride nanowire active region'20148,741,748'Method to grow group III-nitrides on copper using passivation layers'20148,653,500'Volume-scalable high-brightness three-dimensional visible light source'20148,629,782'System and method for using dual telemetry'20148,466,683'Determining properties of earth formations using the electromagnetic coupling tensor'20138,433,518'Multilevel workflow method to extract resistivity anisotropy data from 3D induction measurements'20138,425,681'Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres'20138,417,455'Triaxial antenna electromagnetic measurements'20138,129,993'Determining formation parameters using electromagnetic coupling components'20127,991,555'Electromagnetic directional measurements for non-parallel bed formations'20117,968,438'Ultra-thin high-quality germanium on silicon by low-temperature epitaxy and insulator-capped annealing'20117,925,483'Methods for visualizing distances between wellbore and formation boundaries'20117,913,773'Bidirectional drill string telemetry for measuring and drilling control'20117,888,244'Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer'20117,857,644'Wired drill pipe having conductive end connections'20107,848,887'Making directional measurements using a rotating and non-rotating drilling apparatus'20107,817,062'Surface communication apparatus and method for use with drill string telemetry'20107,745,315'Highly aligned vertical GaN nanowires using submonolayer metal catalysts'20107,670,933'Nanowire-templated lateral epitaxial growth of non-polar group III nitrides'20107,656,160'Determining properties of earth formations using the electromagnetic coupling tensor'20107,630,872'Methods for visualizing distances between wellbore and formation boundaries'20097,599,825'Shoulder bed effects removal'20097,593,340'Method and system for multi-domain route computation'20097,579,263'Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer'20097,382,135'Directional electromagnetic wave resistivity apparatus and method'20087,202,670'Method for characterizing a subsurface formation with a logging instrument disposed in a borehole penetrating the formation'20077,116,166'High fidelity, high power switched amplifier'20066,950,748'Methods and systems for resistivity anisotropy formation analysis'20056,832,159'Intelligent diagnosis of environmental influence on well logs with model-based inversion'20046,671,623'Methods and system for characterizing the response of subsurface measurements to determine wellbore and formation characteristics'20036,405,136'Data compression method for use in wellbore and formation characterization'20026,384,605'Method and apparatus for measurement of borehole size and the resistivity of surrounding earth formations'20026,373,254'Method and apparatus for controlling the effect of contact impedance on a galvanic tool in a logging-while-drilling application'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2017Patents assigned to SCHLUMBERGER TECHNOLOGY CORP (24)· patent assignee history
2002–2018Based in Sugar Land, TX, US· patent location history
2006–2020Based in Shanghai, CN· patent location history
2009–2020Based in Albuquerque, NM, US· patent location history
2010–2015Patents assigned to SANDIA CORP (9)· patent assignee history
2012–2017Patents assigned to LI QIMING (10)· patent assignee history
2017–2019Patents assigned to ENRAYTEK OPTOELECTRONICS CO (8)· patent assignee history
2018–2020Patents assigned to HONG KONG BEIDA JADE BIRD DISPLAY LTD (15)· patent assignee history
2018–2020Based in Beijing, CN· patent location history
2020Based in Hong Kong, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SCHLUMBERGER TECHNOLOGY CORP | 24 | 2002–2017 |
| HONG KONG BEIDA JADE BIRD DISPLAY LTD | 15 | 2018–2020 |
| LI QIMINGself | 10 | 2012–2017 |
| SANDIA CORP | 9 | 2010–2015 |
| ENRAYTEK OPTOELECTRONICS CO | 8 | 2017–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sugar Land, Texas, US | 30 | 2002–2018 |
| Albuquerque, NM, US | 24 | 2009–2020 |
| Shanghai, CN | 11 | 2006–2020 |
| Beijing, CN | 8 | 2018–2020 |
| Hong Kong, CN | 2 | 2020 |