Inventor
Chang Soo Suh
Inventor
Goleta, CA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices45%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
B29CShaping or joining of plastics6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for3%
E05BLocks3%
E05DHinges or suspension devices for doors, windows or wings3%
E05YIndexing scheme associated with subclasses e05d and e05f, relating to construction elements, electric control, power supply, power signal or transmission, user interfaces, mounting or coupling, details, accessories, auxiliary operations not otherwise provided for, application thereof3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
11,049,960Gallium nitride (GaN) based transistor with multiple p-GaN blocks202110,707,324Group IIIA-N HEMT with a tunnel diode in the gate stack202010,680,093HEMT having conduction barrier between drain fingertip and source202010,381,456Group IIIA-N HEMT with a tunnel diode in the gate stack20199,882,041'HEMT having conduction barrier between drain fingertip and source'20189,409,319'Method of laser processing mold surface'20169,343,560'Gallium nitride power devices'20168,753,101'Apparatus for molding a crash pad for a vehicle'20148,633,518'Gallium nitride power devices'20148,344,424'Enhancement mode gallium nitride power devices'20138,193,562'Enhancement mode gallium nitride power devices'20127,948,011'N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor'20117,939,391'III-Nitride devices with recessed gates'20117,915,643'Enhancement mode gallium nitride power devices'20117,851,825'Insulated gate e-mode transistors'20107,795,642'III-nitride devices with recessed gates'20107,728,356'P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor'20107,571,948'Apparatus for preventing vehicle tray from being opened by inertia load'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2016Patents assigned to HYUNDAI MOTOR CO LTD (3)· patent assignee history
2009–2016Based in Suwon-si, KR· patent location history
2010–2016Patents assigned to TRANSPHORM INC (7)· patent assignee history
2010–2014Based in Goleta, CA, US· patent location history
2010Based in Santa Barbara, CA, US· patent location history
2012–2014Patents assigned to SUH CHANG SOO (3)· patent assignee history
2012–2013Patents assigned to MISHRA UMESH (2)· patent assignee history
2016–2021Based in Allen, TX, US· patent location history
2018–2021Patents assigned to TEXAS INSTRUMENTS INC (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TRANSPHORM INC | 7 | 2010–2016 |
| TEXAS INSTRUMENTS INC | 5 | 2018–2021 |
| HYUNDAI MOTOR CO LTD | 3 | 2009–2016 |
| SUH CHANG SOOself | 3 | 2012–2014 |
| MISHRA UMESH | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Goleta, California, US | 8 | 2010–2014 |
| Allen, Texas, US | 6 | 2016–2021 |
| Suwon-si, KR | 3 | 2009–2016 |
| Santa Barbara, California, US | 1 | 2010 |