Inventor

Jun-youn Kim

Inventor

Hwaseong-si, KR

Overview

2006–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers25%

H01LSemiconductor devices20%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%

H10DInorganic electric semiconductor devices7%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%

C30BSingle-crystal growth4%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

B82YSpecific uses or applications of nanostructures4%

G09FDisplaying1%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%

PatentTitleYear

10,950,147Geofence transport sealing2021 10,600,645Manufacturing method of gallium nitride substrate2020 10,338,876Display panels and multivision apparatuses2019 10,094,045Method of manufacturing a gallium nitride substrate2018 9,947,530Method of manufacturing nitride semiconductor substrate2018 9,899,565'Method of manufacturing semiconductor substrate including separating two semiconductor layers from a growth substrate'2018 9,793,432'Light emitting devices and methods of manufacturing the same'2017 9,666,754'Method of manufacturing semiconductor substrate and substrate for semiconductor growth'2017 9,583,340'Semipolar nitride semiconductor structure and method of manufacturing the same'2017 9,525,106'Semiconductor light emitting device'2016 9,472,624'Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof'2016 9,449,817'Semiconductor devices and methods of manufacturing the same'2016 9,422,638'Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrate'2016 9,337,381'Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure'2016 9,257,599'Semiconductor light emitting device including hole injection layer'2016 9,246,048'Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same'2016 9,224,909'GaN based light emitting devices utilizing dispersion bragg reflection layer'2015 9,202,878'Gallium nitride based semiconductor device and method of manufacturing the same'2015 9,190,270'Low-defect semiconductor device and method of manufacturing the same'2015 9,136,430'Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure'2015 8,957,432'Semiconductor device'2015 8,952,419'Semiconductor devices and methods of manufacturing the same'2015 8,946,773'Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure'2015 8,928,017'Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same'2015 8,901,598'Light emitting device'2014 8,877,652'Substrate structure and method of manufacturing the same'2014 8,871,544'Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same'2014 8,829,491'Semiconductor device'2014 8,741,706'High electron mobility transistor and method of manufacturing the same'2014 8,716,749'Substrate structures and methods of manufacturing the same'2014 8,703,512'Light emitting device and method of manufacturing the same'2014 8,643,059'Substrate structure and method of manufacturing the same'2014 8,592,839'Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same'2013 8,581,276'Light emitting device and method of manufacturing the same'2013 8,564,009'Vertical light emitting device'2013 8,541,771'Semiconductor device and method of manufacturing the same'2013 8,536,623'High electron mobility transistor and method of manufacturing the same'2013 8,525,201'Light emitting device and method of manufacturing the same'2013 8,476,670'Light emitting devices and methods of manufacturing the same'2013 8,460,990'CMOS transistor using germanium condensation and method of fabricating the same'2013 8,222,663'Light emitting device and method of manufacturing the same'2012 8,138,510'Gallium nitride light emitting devices and methods of manufacturing the same'2012 8,003,992'Light emitting diode having a wire grid polarizer'2011 8,003,419'Method of manufacturing light emitting device'2011 7,928,017'Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire'2011 7,715,458'Semiconductor optical devices, systems and methods of manufacturing the same'2010 7,688,873'Laser chips and vertical external cavity surface emitting lasers using the same'2010 7,613,215'High efficiency second harmonic generation vertical external cavity surface emitting laser'2009 7,526,005'Highly efficient second harmonic generation (SHG) vertical external cavity surface emitting laser (VECSEL) system'2009 7,492,802'End pumping vertical external cavity surface emitting laser apparatus'2009 7,148,129'Method of growing selective area by metal organic chemical vapor deposition'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (50)· patent assignee history

2006–2016Based in Suwon-si, KR· patent location history

2011–2020Based in Hwaseong-si, KR· patent location history

2012–2016Patents assigned to KIM JUN-YOUN (22)· patent assignee history

2012–2016Patents assigned to TAK YOUNG-JO (14)· patent assignee history

2012–2015Patents assigned to LEE JAE-WON (13)· patent assignee history

2012–2016Patents assigned to HONG HYUN-GI (10)· patent assignee history

2021Based in Issaquah, WA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	50	2006–2020
KIM JUN-YOUNself	22	2012–2016
TAK YOUNG-JO	14	2012–2016
LEE JAE-WON	13	2012–2015
HONG HYUN-GI	10	2012–2016

Locations

Location	Patents	Span
Hwaseong-si, KR	41	2011–2020
Suwon-si, KR	9	2006–2016
Issaquah, Washington, US	1	2021