Inventor
Ting-Sing Wang
Inventor
Hsinchu, TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices19%
H10BElectronic memory devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
G06KGraphical data reading6%
G06VImage or video recognition or understanding6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%
G11CStatic stores4%
H01LSemiconductor devices4%
H10KOrganic electric solid-state devices4%
PatentTitleYear
11,101,437Display substrate motherboard, display substrate and display device202111,084,127Laser lift off method and laser lift off system20219,715,617'Fingerprint sensor'20179,395,801'Finger detection device and method of fingerprint recognition integrated circuit'20169,129,143'Finger sensing structure for capacitive fingerprint recognition IC'20157,622,352'Multi-step gate structure and method for preparing the same'20097,557,407'Recessed gate structure and method for preparing the same'20097,456,458'Dynamic random access memory structure'20087,319,058'Fabrication method of a non-volatile memory'20087,094,697'Method for preparing a deep trench and an etching mixture for the same'20066,774,394'Inline detection device for self-aligned contact defects'20046,677,608'Semiconductor device for detecting gate defects'20046,544,847'Single poly non-volatile memory structure and its fabricating method'20036,380,072'Metallizing process of semiconductor industry'20026,324,097'Single poly non-volatile memory structure and its fabricating method'20016,180,980'Trench non-volatile memory cell'20016,010,938'Method for making a load resistor on a semiconductor chip'20005,882,984'Method for increasing the refresh time of the DRAM'19995,824,234'Method for forming low contact resistance bonding pad'19985,747,378'Method of damage free doping for forming a dram memory cell'19985,037,766'Method of fabricating a thin film polysilicon thin film transistor or resistor'19914,917,467'Active matrix addressing arrangement for liquid crystal display'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2009Based in Hsinchu, TW· patent location history
1998–2003Patents assigned to MOSEL VITELIC INC (8)· patent assignee history
2000–2017Based in Hsinchu County, TW· patent location history
2001Based in Hsin Chu Hsien, TW· patent location history
2004–2009Patents assigned to PROMOS TECHNOLOGIES INC (7)· patent assignee history
2015–2017Patents assigned to IMAGE MATCH DESIGN INC (3)· patent assignee history
2021Patents assigned to BOE TECHNOLOGY GROUP CO LTD (2)· patent assignee history
2021Patents assigned to CHENGDU BOE OPTOELECT TECH CO (2)· patent assignee history
2021Based in Beijing, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOSEL VITELIC INC | 8 | 1998–2003 |
| PROMOS TECHNOLOGIES INC | 7 | 2004–2009 |
| IMAGE MATCH DESIGN INC | 3 | 2015–2017 |
| BOE TECHNOLOGY GROUP CO LTD | 2 | 2021 |
| CHENGDU BOE OPTOELECT TECH CO | 2 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 10 | 1990–2009 |
| Hsinchu County, TW | 9 | 2000–2017 |
| Beijing, CN | 2 | 2021 |
| Hsin Chu Hsien, TW | 1 | 2001 |