Inventor
I-CHENG TUNG
Inventor
US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
H01LSemiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10BElectronic memory devices9%
B82YSpecific uses or applications of nanostructures8%
G11CStatic stores6%
H01GCapacitors6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10NElectric solid-state devices not otherwise provided for4%
PatentTitleYear
12,568,644Contact over active gate structures with trench contact layers for advanced integrated circuit structure fabrication202612,495,559Capacitor with dual dielectric layers202512,437,929Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor202512,328,927Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures202512,255,225Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes202512,224,309Capacitors with built-in electric fields202512,183,739Ribbon or wire transistor stack with selective dipole threshold voltage shifter202412,170,319Dual contact process with stacked metal layers202412,160,998Magnetic tunnel junction structures and related methods202412,100,731Crystalline bottom electrode for perovskite capacitors and methods of fabrication202412,048,165Ferroelectric capacitors and methods of fabrication202411,980,037Memory cells with ferroelectric capacitors separate from transistor gate stacks202411,777,029Vertical transistors for ultra-dense logic and memory applications202311,742,407Multilayer high-k gate dielectric for a high performance logic transistor202311,605,670Magnetic tunnel junction structures and related methods202311,316,027Relaxor ferroelectric capacitors and methods of fabrication2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to INTEL CORP (14)· patent assignee history
2022–2026Based in US· patent location history
2023–2024Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (2)· patent assignee history
2023–2024Patents assigned to UNIV NAT TAIWAN (2)· patent assignee history
2023–2024Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 14 | 2022–2026 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 2 | 2023–2024 |
| UNIV NAT TAIWAN | 2 | 2023–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 14 | 2022–2026 |
| TW | 2 | 2023–2024 |