Inventor

Ki Soo Shin

Inventor
Kyungki-do, KR

Overview

34→
Patents
1997–2021
Patent span
Physics
Primary field (CPC G)

Patents· 34 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices35%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
C11DDetergent compositions5%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds4%
B01DSeparation2%
C07DHeterocyclic compounds2%
C08LCompositions of macromolecular compounds2%
C09DCoating compositions, e.g. paints, varnishes or lacquers2%
H01PWaveguides2%
PatentTitleYear
11,000,801System for detecting an abnormality in a carbon dioxide separation membrane plant202110,898,860Fluid separation apparatus comprising fluid separation membrane, and fluid separation membrane module20219,184,479'Multi mode filter for realizing wide band using capacitive coupling / inductive coupling and capable of tuning coupling value'20159,077,063'Wide-band multi-mode filter'20157,563,753'Cleaning solution for removing photoresist'20097,238,653'Cleaning solution for photoresist and method for forming pattern using the same'20077,235,349'Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator'20077,220,679'Method for forming patterns in a semiconductor device'20077,205,089'Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same'20077,198,887'Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same'20077,175,974'Organic anti-reflective coating composition and method for forming photoresist patterns using the same'20077,138,218'Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator'20067,108,957'Organic anti-reflective coating composition and method for forming photoresist patterns using the same'20067,056,872'Solution composition for removing a remaining photoresist resin'20067,022,458'Photoresist polymer and photoresist composition containing the same'20066,998,442'Organic anti-reflective coating polymers, anti-reflective coating composition comprising the same and preparation methods thereof'20066,924,078'Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion'20056,921,622'Photoresist monomers, polymers thereof and photoresist compositions containing the same'20056,916,594'Overcoating composition for photoresist and method for forming photoresist pattern using the same'20056,875,956'Method of forming photoresist pattern using hot plate oven'20056,858,371'Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same'20056,849,375'Photoresist monomers, polymers thereof and photoresist compositions containing the same'20056,841,526'Cleaning solution for removing photoresist'20056,806,025'Photoresist monomers, polymers thereof and photoresist compositons containing the same'20046,787,285'Pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator'20046,764,964'Method for forming patterns of a semiconductor device'20046,753,128'Photoresist additive for preventing acid migration and photoresist composition comprising the same'20046,749,990'Chemical amplification photoresist monomers, polymers therefrom and photoresist compositions containing the same'20046,737,217'Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same'20046,720,129'Maleimide-photoresist polymers containing fluorine and photoresist compositions comprising the same'20046,653,047'Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same'20036,613,493'Photoresist polymer and composition having nitro groups'20035,710,735'EEPROM and method for fabricating the same'19985,614,429'Method for fabricating EEPROM with control gate in touch with select gate'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2009Based in Kyungki-do, KR· patent location history
2003–2009Patents assigned to HYNIX SEMICONDUCTOR INC (26)· patent assignee history
2004–2006Based in Seoul, KR· patent location history
2005–2006Patents assigned to DONGJIN SEMICHEM CO LTD (2)· patent assignee history
2005–2007Based in Gyeonggi-do, KR· patent location history
2006–2007Based in Seongnam-si, KR· patent location history
2015Patents assigned to Ace tech corp (2)· patent assignee history
2015Patents assigned to CHUN DONG-WAN (2)· patent assignee history
2021Patents assigned to ARSTROMA CO LTD (2)· patent assignee history
2021Based in Daegu, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HYNIX SEMICONDUCTOR INC262003–2009
ARSTROMA CO LTD22021
Ace tech corp22015
CHUN DONG-WAN22015
DONGJIN SEMICHEM CO LTD22005–2006
Locations
LocationPatentsSpan
Kyungki-do, KR151997–2009
Seoul, KR72004–2006
Gyeonggi-do, KR32005–2007
Seongnam-si, KR32006–2007
Daegu, KR22021