Inventor
Shuming Xu
Inventor
Schnecksville, PA, US
Overview
Patents· 47 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices57%
H01LSemiconductor devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H03FAmplifiers4%
H04BTransmission4%
H01FMagnets3%
H10KOrganic electric solid-state devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations1%
PatentTitleYear
10,735,044Lossless switch for radio frequency front-end module202010,629,723Schottky power MOSFET202010,566,270Enhanced thermal transfer in a semiconductor structure202010,236,288Integrated on-chip junction capacitor for power management integrated circuit device201910,224,268Enhanced thermal transfer in a semiconductor structure201910,141,271Semiconductor device having enhanced high-frequency capability and methods for making same201810,134,641Enhanced integration of DMOS and CMOS semiconductor devices201810,116,347Lossless switch for radio frequency front-end module20189,704,855'Integration of active power device with passive components'20179,628,118'Adaptive envelope tracking for biasing radio frequency power amplifiers'20179,502,557'LDMOS for high frequency power amplifiers'20168,722,503'Capacitors and methods of forming'20148,692,324'Semiconductor devices having charge balanced structure'20148,648,445'Metal-oxide-semiconductor device having trenched diffusion region and method of forming same'20148,614,480'Power MOSFET with integrated gate resistor and diode-connected MOSFET'20138,547,162'Integration of MOSFETs in a source-down configuration'20138,153,484'Metal-oxide-semiconductor device having trenched diffusion region and method of forming same'20127,820,517'Control of hot carrier injection in a metal-oxide semiconductor device'20107,745,846'LDMOS integrated Schottky diode'20107,589,378'Power LDMOS transistor'20097,579,245'Dual-gate metal-oxide-semiconductor device'20097,560,808'Chip scale power LDMOS device'20097,446,375'Quasi-vertical LDMOS device having closed cell layout'20087,420,247'Power LDMOS transistor'20087,335,565'Metal-oxide-semiconductor device having improved performance and reliability'20087,329,922'Dual-gate metal-oxide semiconductor device'20087,297,606'Metal-oxide-semiconductor device including a buried lightly-doped drain region'20077,282,765'Power LDMOS transistor'20077,279,744'Control of hot carrier injection in a metal-oxide semiconductor device'20077,235,845'Power LDMOS transistor'20077,148,540'Graded conductive structure for use in a metal-oxide-semiconductor device'20067,138,690'Shielding structure for use in a metal-oxide-semiconductor device'20067,126,193'Metal-oxide-semiconductor device with enhanced source electrode'20067,087,959'Metal-oxide-semiconductor device having an enhanced shielding structure'20067,067,890'Thick oxide region in a semiconductor device'20067,041,561'Enhanced substrate contact for a semiconductor device'20067,005,703'Metal-oxide-semiconductor device having improved performance and reliability'20066,927,453'Metal-oxide-semiconductor device including a buried lightly-doped drain region'20056,908,825'Method of making an integrated circuit inductor wherein a plurality of apertures are formed beneath an inductive loop'20056,890,804'Metal-oxide-semiconductor device formed in silicon-on-insulator'20056,828,628'Diffused MOS devices with strained silicon portions and methods for forming same'20046,710,416'Split-gate metal-oxide-semiconductor device'20046,667,516'RF LDMOS on partial SOI substrate'20036,495,903'Integrated circuit inductor'20026,461,902'RF LDMOS on partial SOI substrate'20026,423,987'Self-protect thyristor'20026,118,141'Emitter-switched thyristor'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2005Based in Santa Clara, CA, US· patent location history
2002Based in Hillview Park, SG· patent location history
2004–2012Patents assigned to AGERE SYSTEMS INC (17)· patent assignee history
2004–2020Based in Schnecksville, PA, US· patent location history
2006–2010Patents assigned to CICLON SEMICONDUCTOR DEVICE CO (5)· patent assignee history
2009–2020Patents assigned to TEXAS INSTRUMENTS INC (5)· patent assignee history
2012–2014Patents assigned to XU SHUMING (6)· patent assignee history
2016–2020Patents assigned to COOLSTAR TECH INC (10)· patent assignee history
2016Based in San Mateo, CA, US· patent location history
2017–2020Based in Sunnyvale, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AGERE SYSTEMS INC | 17 | 2004–2012 |
| COOLSTAR TECH INC | 10 | 2016–2020 |
| XU SHUMINGself | 6 | 2012–2014 |
| CICLON SEMICONDUCTOR DEVICE CO | 5 | 2006–2010 |
| TEXAS INSTRUMENTS INC | 5 | 2009–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Schnecksville, Pennsylvania, US | 31 | 2004–2020 |
| Sunnyvale, California, US | 9 | 2017–2020 |
| Santa Clara, California, US | 4 | 2002–2005 |
| San Mateo, California, US | 1 | 2016 |
| Hillview Park, SG | 1 | 2002 |