Inventor
Shih-Hung Tsai
Inventor
Tainan, TW
Overview
Patents· 73 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10BElectronic memory devices2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
G06FElectric digital data processing1%
PatentTitleYear
10,868,148Rinse process after forming fin-shaped structure202010,707,135Method for fabricating semiconductor device202010,692,777Semiconductor device202010,643,997Semiconductor device with metal gates202010,629,695Semiconductor device and method for fabricating the same202010,497,810Method for fabricating semiconductor device201910,431,497Manufacturing method of epitaxial fin-shaped structure201910,263,095Method of forming semiconductor fin structure201910,236,383Method for fabricating semiconductor device201910,211,313Semiconductor device and method for fabricating the same201910,121,881Semiconductor device and method for fabricating the same201810,068,808Semiconductor device and method for fabricating the same201810,062,770Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof201810,056,467Semiconductor fin structure and method of forming the same201810,032,672Method of fabricating a semiconductor device having contact structures20189,947,792Semiconductor device and method for fabricating the same20189,859,148'Semiconductor device and method for fabricating the same'20189,847,402Method of using polysilicon as stop layer in a replacement metal gate process20179,842,760'Method for fabricating semiconductor device'20179,831,133Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate20179,786,662'Semiconductor device and method for fabricating the same'20179,761,692'Method of using polysilicon as stop layer in a replacement metal gate process'20179,755,056'Method for forming semiconductor device'20179,754,938'Semiconductor device and method of fabricating the same'20179,704,737'Semiconductor device and method for fabricating the same'20179,653,603'Semiconductor device and method for fabricating the same'20179,653,290'Method for manufacturing nanowire transistor device'20179,627,268'Method for fabricating semiconductor device'20179,583,568'Semiconductor structure and manufacturing method thereof'20179,583,394'Manufacturing method of semiconductor structure'20179,559,164'Nanowire transistor device and method for manufacturing nanowire transistor device'20179,552,978'Method of decreasing fin bending'20179,553,026'Semiconductor device and method for fabricating the same'20179,536,792'Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof'20179,530,646'Method of forming a semiconductor structure'20169,530,778'Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate'20169,508,715'Semiconductor structure'20169,502,410'Semiconductor structure and manufacturing method thereof'20169,502,252'Semiconductor device and method for fabricating the same'20169,484,263'Method of removing a hard mask on a gate'20169,455,194'Method for fabricating semiconductor device'20169,384,978'Method of forming trenches'20169,349,653'Manufacturing method of semiconductor structure for preventing surface of fin structure from damage and providing improved process window'20169,349,833'Semiconductor device and method of forming the same'20169,318,334'Method for fabricating semiconductor device'20169,312,365'Manufacturing method of non-planar FET'20169,281,209'Method for fabricating semiconductor device'20169,268,896'Method of forming a photomask'20169,269,791'Multi-gate MOSFET with embedded isolation structures'20169,142,641'Method for manufacturing finFET'20159,123,659'Method for manufacturing finFET device'20159,105,685'Method of forming shallow trench isolation structure'20159,076,870'Method for forming fin-shaped structure'20159,054,187'Semiconductor structure'20159,024,393'Manufacturing method for semiconductor device having metal gate'20159,006,091'Method of forming semiconductor device having metal gate'20158,987,096'Semiconductor process'20158,877,623'Method of forming semiconductor device'20148,872,280'Non-planar FET and manufacturing method thereof'20148,853,013'Method for fabricating field effect transistor with fin structure'20148,841,197'Method for forming fin-shaped structures'20148,779,513'Non-planar semiconductor structure'20148,722,501'Method for manufacturing multi-gate transistor device'20148,691,651'Method of forming non-planar FET'20148,669,618'Manufacturing method for semiconductor device having metal gate'20148,664,060'Semiconductor structure and method of fabricating the same'20148,642,457'Method of fabricating semiconductor device'20148,592,271'Metal-gate CMOS device and fabrication method thereof'20138,470,714'Method of forming fin structures in integrated circuits'20138,466,502'Metal-gate CMOS device'20138,441,072'Non-planar semiconductor structure and fabrication method thereof'20138,426,277'Semiconductor process'20138,278,184'Fabrication method of a non-planar transistor'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2020Patents assigned to UNITED MICROELECTRONICS CORP (73)· patent assignee history
2012–2016Patents assigned to TSAI SHIH-HUNG (15)· patent assignee history
2012–2015Patents assigned to LIN CHIEN-TING (11)· patent assignee history
2012–2016Patents assigned to FU SSU-I (10)· patent assignee history
2012–2016Patents assigned to CHEN YING-TSUNG (9)· patent assignee history
2012–2020Based in Tainan, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 73 | 2012–2020 |
| TSAI SHIH-HUNGself | 15 | 2012–2016 |
| LIN CHIEN-TING | 11 | 2012–2015 |
| FU SSU-I | 10 | 2012–2016 |
| CHEN YING-TSUNG | 9 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 73 | 2012–2020 |