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Inventor

Ta-Wei Wang

Inventor
Taipei, TW

Overview

22→
Patents
2002–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices45%
H01LSemiconductor devices13%
F02CGas-turbine plants5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
A01BSoil working in agriculture or forestry3%
A01CPlanting3%
B63HMarine propulsion or steering3%
F01DNon-positive displacement machines or engines, e.g. steam turbines3%
F23CMethods or apparatus for combustion using fluid fuel or solid fuel suspended in  a carrier gas or air3%
PatentTitleYear
11,006,568Mobile operating platform for paddy field202110,756,674Amplifier20209,899,519'Defect-Free SiGe source/drain formation by epitaxy-free process'20189,711,413'High performance CMOS device design'20179,159,629'High performance CMOS device design'20159,070,774'Process for fabricating silicon-on-nothing MOSFETs'20158,900,980'Defect-free SiGe source/drain formation by epitaxy-free process'20148,507,951'High performance CMOS device design'20138,154,051'MOS transistor with in-channel and laterally positioned stressors'20128,106,468'Process for fabricating silicon-on-nothing MOSFETs'20128,067,280'High performance CMOS devices and methods for making same'20117,649,233'High performance transistor with a highly stressed channel'20107,642,607'MOS devices with reduced recess on substrate surface'20107,564,108'Nitrogen treatment to improve high-k gate dielectrics'20097,465,972'High performance CMOS device design'20087,323,392'High performance transistor with a highly stressed channel'20087,320,921'Smart grading implant with diffusion retarding implant for making integrated circuit chips'20087,268,362'High performance transistors with SiGe strain'20077,253,481'High performance MOS device with graded silicide'20076,711,889'Gas turbine engine'20046,637,209'Engine core rotor shaft structure for gas turbine engine'20036,368,129'Electrical connector with outer and inner sleeves'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002Based in Taoyuan, TW· patent location history
2003–2004Patents assigned to IND TECH RES INST (2)· patent assignee history
2003–2004Based in Pan-Chiao, TW· patent location history
2007–2015Patents assigned to TAIWAN SEMICONDUCTOR MFG (15)· patent assignee history
2007–2018Based in Taipei, TW· patent location history
2011–2015Patents assigned to WANG TA-WEI (6)· patent assignee history
2011–2014Patents assigned to WANG CHIH-HAO (4)· patent assignee history
2012–2015Patents assigned to CHANG CHIH-SHENG (2)· patent assignee history
2020Based in Hsinchu, TW· patent location history
2021Based in Zibo, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG152007–2015
WANG TA-WEIself62011–2015
WANG CHIH-HAO42011–2014
CHANG CHIH-SHENG22012–2015
IND TECH RES INST22003–2004
Locations
LocationPatentsSpan
Taipei, TW172007–2018
Pan-Chiao, TW22003–2004
Zibo, CN12021
Hsinchu, TW12020
Taoyuan, TW12002