Inventor
Wladyslaw Walukiewicz
Inventor
Kensington, CA, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation23%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution23%
H01LSemiconductor devices16%
H10DInorganic electric semiconductor devices12%
Y02PClimate change mitigation technologies in the production or processing of goods12%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
10,128,389Nitride UV light sensors on silicon substrates201810,128,410Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates20189,780,239'Nitride UV light sensors on silicon substrates'20179,660,126'Photovoltaic device with three dimensional charge separation and collection'20179,312,430'Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates'20169,029,867'Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates'20158,962,992'Dilute group III-V nitride intermediate band solar cells with contact blocking layers'20158,232,470'Dilute Group III-V nitride intermediate band solar cells with contact blocking layers'20128,129,615'Multiband semiconductor compositions for photovoltaic devices'20128,129,614'Single P-N junction tandem photovoltaic device'20128,039,740'Single P-N junction tandem photovoltaic device'20117,709,728'Multiband semiconductor compositions for photovoltaic devices'20107,217,882'Broad spectrum solar cell'20076,849,882'Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer'20056,759,312'Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2017Patents assigned to UNIV CALIFORNIA (6)· patent assignee history
2004–2018Based in Kensington, CA, US· patent location history
2011–2018Patents assigned to ROSESTREET LABS ENERGY INC (5)· patent assignee history
2012–2017Patents assigned to WALUKIEWICZ WLADYSLAW (6)· patent assignee history
2012–2015Patents assigned to YU KIN MAN (4)· patent assignee history
2015–2017Patents assigned to GHERASOIU IULIAN (2)· patent assignee history
2017–2018Based in Phoenix, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV CALIFORNIA | 6 | 2004–2017 |
| WALUKIEWICZ WLADYSLAWself | 6 | 2012–2017 |
| ROSESTREET LABS ENERGY INC | 5 | 2011–2018 |
| YU KIN MAN | 4 | 2012–2015 |
| GHERASOIU IULIAN | 2 | 2015–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kensington, California, US | 13 | 2004–2018 |
| Phoenix, AZ, US | 2 | 2017–2018 |