Inventor
Naokatsu Ikegami
Inventor
Saitama, JP
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock15%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems11%
B81BMicrostructural devices or systems, e.g. micromechanical devices7%
C03CChemical composition of glasses, glazes or vitreous enamels4%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
H01JElectric discharge tubes or discharge lamps4%
H04BTransmission4%
H10DInorganic electric semiconductor devices4%
PatentTitleYear
7,622,394'Method of fabricating semiconductor device including forming a protective layer and removing after etching a trench'20097,509,858'Acceleration sensor manufacturable by simplified method'20097,323,354'Method of manufacturing MEMS device'20087,153,716'Method of manufacturing a micro-electrical-mechanical system'20067,100,448'Accelerometer'20067,084,069'Method for manufacturing a semiconductor device'20067,029,957'Method of manufacturing semiconductor device having thin film SOI structure'20067,004,030'Acceleration sensor'20066,624,010'Method of manufacturing semiconductor device having thin film SOI structure'20036,500,745'Method for manufacturing sidewall spacers of a semiconductor device with high etch selectivity and minimized shaving'20026,413,438'Method of forming via hole by dry etching'20026,355,572'Method of dry etching organic SOG film'20026,200,735'Method for forming contact hole by dry etching'20016,037,588'Method for testing semiconductor device'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2008Patents assigned to OKI ELECTRIC IND CO LTD (12)· patent assignee history
2000–2006Based in Tokyo, JP· patent location history
2002–2009Based in Saitama, JP· patent location history
2009Patents assigned to OKI SEMICONDUCTOR CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| OKI ELECTRIC IND CO LTD | 12 | 2000–2008 |
| OKI SEMICONDUCTOR CO LTD | 2 | 2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saitama, JP | 8 | 2002–2009 |
| Tokyo, JP | 6 | 2000–2006 |