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Inventor

Hossein Paravi

Inventor
Sandy, UT, US

Overview

3→
Patents
2006–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
PatentTitleYear
8,278,702'High density trench field effect transistor'20128,003,522'Method for forming trenches with wide upper portion and narrow lower portion'20117,132,715'Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2012Patents assigned to FAIRCHILD SEMICONDUCTOR (3)· patent assignee history
2006–2012Based in Sandy, UT, US· patent location history
2012Patents assigned to Hunt Scott L (1)· patent assignee history
2012Patents assigned to PAN JAMES (1)· patent assignee history
2012Patents assigned to PARAVI HOSSEIN (1)· patent assignee history
2012Patents assigned to PROBST DEAN E (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FAIRCHILD SEMICONDUCTOR32006–2012
Hunt Scott L12012
PAN JAMES12012
PARAVI HOSSEINself12012
PROBST DEAN E12012
Locations
LocationPatentsSpan
Sandy, UT, US32006–2012