Inventor
Claire Ravit
Inventor
Leuven, BE
Overview
Patents· 2 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests25%
PatentTitleYear
7,554,138'Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer'20097,157,349'Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2009Patents assigned to NXP BV (2)· patent assignee history
2007–2009Based in Leuven, BE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NXP BV | 2 | 2007–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Leuven, BE | 2 | 2007–2009 |