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Inventor

Wanli Wang

Inventor
Jiangsu, CN

Overview

3→
Patents
2017
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
9,666,682'Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method'20179,583,587'Method for manufacturing injection-enhanced insulated-gate bipolar transistor'20179,553,164'Method for manufacturing IGBT'2017

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2017Patents assigned to CSMC TECHNOLOGIES FAB1 CO LTD (3)· patent assignee history
2017Patents assigned to CSMC TECH FABI CO LTD (1)· patent assignee history
2017Based in Jiangsu, CN· patent location history
2017Based in Wuxi, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CSMC TECHNOLOGIES FAB1 CO LTD32017
CSMC TECH FABI CO LTD12017
Locations
LocationPatentsSpan
Jiangsu, CN22017
Wuxi, CN12017