Inventor
CHIEN-LIANG WU
Inventor
TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10DInorganic electric semiconductor devices29%
H10BElectronic memory devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
G11CStatic stores8%
H10NElectric solid-state devices not otherwise provided for6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
12,396,194High electron mobility transistor and method for fabricating the same202512,245,424One-time programmable memory capacitor structure and manufacturing method thereof202512,206,018High electron mobility transistor and method for fabricating the same202512,150,314Magnetoresistive random access memory202412,132,043Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same202412,119,342Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same202412,009,415High electron mobility transistor and method for fabricating the same202411,973,133High electron mobility transistor and method for fabricating the same202411,864,391Magnetoresistive random access memory202411,854,632Semiconductor memory structure and fabrication method thereof202311,765,891One-time programmable (OTP) memory cell and fabrication method thereof202311,705,512High electron mobility transistor (HEMT) and forming method thereof202311,688,800High electron mobility transistor and method for fabricating the same202311,631,664Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same202311,631,761High electron mobility transistor (HEMT) and forming method thereof202311,605,6313D semiconductor structure and method of fabricating the same202311,569,295Magnetoresistive random access memory202311,296,214High electron mobility transistor (HEMT) and forming method thereof202211,195,8313D semiconductor structure and method of fabricating the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to UNITED MICROELECTRONICS CORP (19)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 19 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 19 | 2021–2025 |