Inventor
Frédéric Dupont
Inventor
Grenoble, FR
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
H10DInorganic electric semiconductor devices10%
H01LSemiconductor devices6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
C02FTreatment of water, waste water, sewage, or sludge3%
G01RMeasuring electric variables3%
Y02WClimate change mitigation technologies related to wastewater treatment or waste management3%
PatentTitleYear
9,011,598'Method for making a composite substrate and composite substrate according to the method'20158,878,160'III-V light emitting device with thin n-type region'20148,785,293'Adaptation of the lattice parameter of a layer of strained material'20148,581,229'III-V light emitting device with thin n-type region'20138,310,266'Device for characterizing the electro-optical performance of a semiconductor component'20127,968,909'Reconditioned substrates for fabricating compound material wafers'20117,851,330'Methods for fabricating compound material wafers'20107,695,996'Photodetecting device'20107,531,428'Recycling the reconditioned substrates for fabricating compound material wafers'20097,452,745'Photodetecting device'20087,232,743'Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same'20076,995,427'Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same'20066,808,629'Method for effluent purification'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004Based in Lingolsheim, FR· patent location history
2006–2015Patents assigned to SOITEC SILICON ON INSULATOR (9)· patent assignee history
2006–2011Based in Grenoble, FR· patent location history
2010–2015Based in Seyssins, FR· patent location history
2012–2014Patents assigned to DUPONT FREDERIC (3)· patent assignee history
2012Patents assigned to DAULTIER YVES (1)· patent assignee history
2012Based in Crolles, FR· patent location history
2013–2014Patents assigned to KONINKL PHILIPS NV (2)· patent assignee history
2015Patents assigned to BOUSSAGOL ALICE (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SOITEC SILICON ON INSULATOR | 9 | 2006–2015 |
| DUPONT FREDERICself | 3 | 2012–2014 |
| KONINKL PHILIPS NV | 2 | 2013–2014 |
| BOUSSAGOL ALICE | 1 | 2015 |
| DAULTIER YVES | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Grenoble, FR | 6 | 2006–2011 |
| Seyssins, FR | 5 | 2010–2015 |
| Crolles, FR | 1 | 2012 |
| Lingolsheim, FR | 1 | 2004 |