Inventor

Haruhisa Takiguchi

Inventor

Nara, JP

Overview

1987–2016

Patent span

Electricity

Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light56%

H10HInorganic light-emitting semiconductor devices having potential barriers9%

G02BOptical elements, systems or apparatus7%

B82YSpecific uses or applications of nanostructures5%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

G01DMeasuring not specially adapted for a specific variable2%

H01LSemiconductor devices2%

H04BTransmission2%

H10DInorganic electric semiconductor devices2%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

PatentTitleYear

9,293,647'Nitride semiconductor light-emitting device and method of manufacturing the same'2016 8,963,165'Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element'2015 7,349,154'Reflection type screen'2008 6,653,248'Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device'2003 6,426,522'Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device'2002 6,155,688'Dark field projection display'2000 5,903,585'Optoelectronic devices'1999 5,654,557'Quantum wire structure and a method for producing the same'1997 5,477,319'Optical heterodyne detection method and apparatus utilizing a scattered reference beam'1995 5,473,173'Quantum well structure having differentially strained quantum well layers'1995 5,457,561'System for transmitting a beam in the air'1995 5,403,916'Method for producing a light emitting diode having transparent substrate'1995 5,361,271'Semiconductor laser'1994 5,345,460'Semiconductor laser device with window regions'1994 5,335,241'Buried stripe type semiconductor laser device'1994 5,309,472'Semiconductor device and a method for producing the same'1994 5,303,255'Distributed feedback semiconductor laser device and a method of producing the same'1994 5,292,685'Method for producing a distributed feedback semiconductor laser device'1994 5,280,493'Quantum wire laser'1994 5,182,758'Periodic gain-type semiconductor laser device'1993 5,070,510'Semiconductor laser device'1991 5,031,991'Optical coupling circuit element'1991 5,027,368'Semiconductor laser device'1991 5,007,107'Semiconductor laser device'1991 4,997,747'Method for the formation of a diffraction grating'1991 4,975,922'Multi-layered dielectric film'1990 4,941,148'Semiconductor laser element with a single longitudinal oscillation mode'1990 4,910,744'Buried heterostructure semiconductor laser device'1990 4,908,830'Buried type semiconductor laser device'1990 4,908,831'Buried type semiconductor laser device'1990 4,901,328'Semiconductor VSIS laser'1990 4,872,174'Semiconductor laser device having a grating structure'1989 4,862,472'Semiconductor laser device'1989 4,858,215'Integrated optical disc pickup that allows variations in the wavelength of the laser beam'1989 4,852,116'Semiconductor laser device'1989 4,849,985'Distributed feedback semiconductor laser device'1989 4,841,534'Buried type semiconductor laser device'1989 4,839,900'Buried type semiconductor laser device'1989 4,820,019'Optical device'1989 4,819,240'Light modulator'1989 4,806,778'Micro-displacement measuring apparatus using a semiconductor laser'1989 4,806,454'Method for the formation of a diffraction grating'1989 4,805,183'Distributed feedback semiconductor laser device'1989 4,803,690'Semiconductor laser'1989 4,799,227'Semiconductor laser device having a buried heterostructure'1989 4,771,434'Semiconductor laser device with an integrated light-detecting area'1988 4,745,616'Semiconductor laser device with a diffraction grating'1988 4,745,615'Semiconductor laser device with a diffraction grating'1988 4,730,329'Semiconductor laser device'1988 4,716,570'Distributed feedback semiconductor laser device'1987 4,712,219'Visible double heterostructure-semiconductor laser'1987 4,692,206'Method for producing a semiconductor laser device having a buried heterostructure'1987 4,679,200'Semiconductor laser'1987 4,660,983'Apparatus for measuring reflectivities of resonator facets of semiconductor laser'1987 4,658,403'Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics'1987 4,655,597'Micro-displacement measuring apparatus using a semiconductor laser'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2016Patents assigned to SHARP KK (56)· patent assignee history

1987–2008Based in Nara, JP· patent location history

1987–2016Based in Osaka, JP· patent location history

1989–1990Based in Tenri, JP· patent location history

1994–1997Patents assigned to OPTOELECTRONICS TECHNOLOGY RES (2)· patent assignee history

2000Based in Kashiwa, JP· patent location history

2002–2003Based in Chiba, JP· patent location history

2015Patents assigned to ARAKI MASAHIRO (1)· patent assignee history

2015Patents assigned to FUNAKI TAKESHI (1)· patent assignee history

2015Patents assigned to HOTEIDA MASAYUKI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SHARP KK	56	1987–2016
OPTOELECTRONICS TECHNOLOGY RES	2	1994–1997
ARAKI MASAHIRO	1	2015
FUNAKI TAKESHI	1	2015
HOTEIDA MASAYUKI	1	2015

Locations

Location	Patents	Span
Nara, JP	37	1987–2008
Osaka, JP	11	1987–2016
Tenri, JP	4	1989–1990
Chiba, JP	2	2002–2003
Kashiwa, JP	1	2000