LexDanaLexDanabeta
Inventor

Yuichi Ohsawa

Inventor
Yokohama, JP

Overview

106→
Patents
1994–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 106 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for20%
G11BInformation storage based on relative movement between record carrier and transducer14%
G11CStatic stores13%
H10BElectronic memory devices12%
B82YSpecific uses or applications of nanostructures11%
H01LSemiconductor devices10%
Y10TTechnical subjects covered by former us classification7%
H01FMagnets5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G01RMeasuring electric variables2%
PatentTitleYear
11,127,895Magnetic memory device202110,867,649Magnetic memory device202010,811,067Magnetic memory device with nonmagnetic layer between two magnetic layers202010,797,229Magnetic memory device202010,643,682Magnetic memory202010,580,472Magnetic memory device202010,529,399Magnetic memory device202010,510,949Magnetic memory device and method for manufacturing the same201910,504,574Magnetic memory device201910,490,730Magnetic memory device with increased storage density201910,483,459Magnetic memory201910,395,709Magnetic memory device201910,361,358Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive element201910,347,820Magnetic memory device201910,276,786Magnetic memory201910,211,394Magnetic memory201910,170,694Magnetic memory201910,147,473Magnetic memory201810,141,037Magnetic memory device201810,109,332Magnetic memory device201810,109,334Magnetic memory201810,103,198Magnetoresistive element and magnetic memory201810,103,199Magnetic memory201810,096,770Magnetic memory device and method for manufacturing the same201810,068,946Magnetic memory20189,985,201Magnetic memory based on spin hall effect20189,966,122Magnetic memory device20189,916,882'Magnetic memory'20189,881,660'Magnetic memory'20189,799,482'Device manufacturing apparatus and manufacturing method of magnetic device using structure to pass ion beam'20179,793,469'Magnetoresistive element and magnetic memory'20179,698,340'Magnetic memory element and magnetic memory'20179,299,918'Magnetoresistive element and magnetic memory'20169,224,944'Magnetic memory and method of manufacturing the same'20159,166,065'Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing method'20159,082,961'Method of manufacturing multilayer film'20158,994,131'Magnetic memory'20158,981,507'Method for manufacturing nonvolatile memory device'20158,878,317'Magnetoresistive element and magnetic memory'20148,737,122'Nonvolatile memory device'20148,716,034'Method of manufacturing magnetic memory'20148,716,817'Magnetic memory element and nonvolatile memory device'20148,710,605'Magnetic memory and method of manufacturing the same'20148,576,616'Magnetic element and nonvolatile memory device'20138,508,979'Magnetic recording element and nonvolatile memory device'20138,488,375'Magnetic recording element and nonvolatile memory device'20138,420,499'Concave-convex pattern forming method and magnetic tunnel junction element forming method'20138,419,412'Nano-imprint mold and substrate with uneven patterns manufactured by using the mold'20138,080,478'Method of producing mask'20118,077,509'Magnetic memory'20118,049,998'Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus'20117,931,976'Magnetic recording element'20117,889,543'Magnetic memory element and magnetic memory apparatus'20117,494,724'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20097,440,239'Magneto-resistance effect element and reproducing head'20087,372,727'Magnetic cell and magnetic memory'20087,355,883'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20087,323,258'Magnetic recording medium and method for manufacturing the same'20087,265,950'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20077,240,419'Method of manufacturing a magnetoresistance effect element'20077,126,849'Magnetic cell and magnetic memory'20067,126,848'Magnetic cell and magnetic memory'20067,120,049'Magnetic cell and magnetic memory'20066,956,766'Magnetic cell and magnetic memory'20056,940,700'Magnetic head and magnetic reproducing apparatus'20056,937,447'Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory'20056,928,724'Magnetoresistance effect element and method for producing same'20056,770,210'Magnetoresistance effect element and method for producing same'20046,757,143'Magnetoresistive effect element, its manufacturing method, magnetic head, magnetic reproducing apparatus, and magnetic memory'20046,483,673'Differential detection magnetoresistance head with laminated structure'20026,395,388'Magnetoresistance effect element'20026,369,992'Yoke-type head with magneto-resistance effect film recessed from medium facing surface and extending across magnetic gap'20026,368,706'Magnetoresistance effect element'20026,307,708'Exchange coupling film having a plurality of local magnetic regions, magnetic sensor having the exchange coupling film, and magnetic head having the same'20016,285,531'Magnetic head with magneto-resistance effect element disposed on opposite side of magnetic core pair from recording coil'20016,256,863'Yoke type magnetoresistance head and manufacturing method of the same'20016,256,171'Thin film magnetic head having an improved heat dispersion and magnetic recording apparatus using the same'20016,172,858'Thin film head'20016,159,593'Magnetoresistance effect element'20006,157,525'Magnetic head'20006,118,621'Magnetoresistance effect head having a pair of protrusions, steps or depressions between the detecting and nondetecting areas for improved off-track characteristics'20006,111,722'Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same'20006,046,891'Thin film head'20006,038,101'Magnetic head and method of manufacturing magnetic head'20005,991,125'Magnetic head'19995,946,167'Magnetoresistive sensor having lead and/or bias layer structure contributing to a narrow gap'19995,912,790'Thin film magnetic recording-reproducing head having a high recording density and high fidelity'19995,905,611'Thin film magnetic head responsive to spin-dependent scattering'19995,896,251'Magnetoresistance effect head with conductor film pair and magnetic field proving film pair disposed between substrate and magnetoresistance effect film'19995,828,525'Differential detection magnetoresistance head'19985,780,176'Magnetoresistance effect element'19985,777,542'Magnetoresistance effect device and manufacturing method thereof'19985,768,066'Magnetoresistive head having an antiferromagnetic layer interposed between first and second magnetoresistive elements'19985,738,946'Magnetoresistance effect element'19985,725,963'Magnetoresistance effect element'19985,702,832'Magnetoresistance effect element'19975,698,335'Magnetoresistance effect element having bias films'19975,688,605'Magnetoresistance effect element'19975,587,026'Ferromagnetic film'19965,585,199'Magnetoresistance effect head'19965,576,915'Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof'19965,549,978'Magnetoresistance effect element'19965,484,491'Ferromagnetic film'19965,461,527'Magneto-resistive head'19955,329,413'Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions'19945,304,975'Magnetoresistance effect element and magnetoresistance effect sensor'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2021Patents assigned to TOSHIBA KK (104)· patent assignee history
1994–2020Based in Yokohama, JP· patent location history
1996–2004Based in Tokyo, JP· patent location history
1999Based in Ota, JP· patent location history
2001–2020Based in Kanagawa, JP· patent location history
2005Based in Minato-ku, JP· patent location history
2011–2015Patents assigned to OHSAWA YUICHI (15)· patent assignee history
2011–2015Patents assigned to ITO JUNICHI (14)· patent assignee history
2011–2015Patents assigned to KASHIWADA SAORI (9)· patent assignee history
2013–2015Patents assigned to AMANO MINORU (9)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK1041994–2021
OHSAWA YUICHIself152011–2015
ITO JUNICHI142011–2015
AMANO MINORU92013–2015
KASHIWADA SAORI92011–2015
Locations
LocationPatentsSpan
Yokohama, JP581994–2020
Kanagawa, JP292001–2020
Tokyo, JP161996–2004
Minato-ku, JP12005
Ota, JP11999