Inventor
Ryuichi Kubo
Inventor
Ishikawa, JP
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H03Hprimary
H03HImpedance networks, e.g. resonant circuits33%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light19%
H10NElectric solid-state devices not otherwise provided for11%
Y10TTechnical subjects covered by former us classification11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B81BMicrostructural devices or systems, e.g. micromechanical devices4%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems4%
C23CCoating metallic material4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
8,776,334'Piezoelectric thin film resonator and manufacturing method thereof'20148,726,475'Method for producing piezoelectric thin-film resonator'20148,123,966'Piezoelectric electronic component, process for producing the same, and communication apparatus'20127,436,102'Piezoelectric thin-film resonator and method for producing the same'20087,378,922'Piezoelectric filter'20087,342,351'Piezoelectric electronic component, and production method therefor, and communication equipment'20087,327,209'Piezoelectric thin film resonator'20087,259,032'Hermetically sealing a package to include a barrier metal'20077,161,447'Piezoelectric resonator, piezoelectric filter, and communication apparatus'20076,720,559'Infrared sensor'20046,674,081'Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same'20046,635,495'Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same'20036,593,519'Infrared sensor'20036,576,566'Apparatus and method for forming thin film at low temperature and high deposition rate'20036,469,302'Heat absorbent for an infrared sensor and method for forming same'20026,262,418'Thermal type infrared sensing device, fabrication method for thermal type infrared sensing device, and infrared imaging system and infrared imaging apparatus'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2004Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (4)· patent assignee history
2001–2002Based in Shiga, JP· patent location history
2002–2014Patents assigned to MURATA MANUFACTURING CO (15)· patent assignee history
2003–2004Patents assigned to HOCHIKI CO (3)· patent assignee history
2003–2007Based in Otsu, JP· patent location history
2003–2004Based in Nagaokakyo, JP· patent location history
2008–2014Based in Ishikawa, JP· patent location history
2012–2014Patents assigned to FUJII HIDETOSHI (3)· patent assignee history
2012–2014Patents assigned to KUBO RYUICHI (3)· patent assignee history
2012–2014Based in Ishikawa-gun, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MURATA MANUFACTURING CO | 15 | 2002–2014 |
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 4 | 2001–2004 |
| FUJII HIDETOSHI | 3 | 2012–2014 |
| HOCHIKI CO | 3 | 2003–2004 |
| KUBO RYUICHIself | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ishikawa, JP | 5 | 2008–2014 |
| Otsu, JP | 4 | 2003–2007 |
| Nagaokakyo, JP | 3 | 2003–2004 |
| Ishikawa-gun, JP | 2 | 2012–2014 |
| Shiga, JP | 2 | 2001–2002 |