Inventor
Mustafa Pinarbasi
Inventor
Morgan Hill, CA, US
Overview
Patents· 235 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer24%
B82YSpecific uses or applications of nanostructures20%
H10NElectric solid-state devices not otherwise provided for8%
H01FMagnets8%
Y10TTechnical subjects covered by former us classification7%
G01RMeasuring electric variables7%
H01LSemiconductor devices7%
G11CStatic stores5%
H10BElectronic memory devices5%
C23CCoating metallic material2%
PatentTitleYear
11,094,359High retention multi-level-series magnetic random-access memory202110,971,680Multi terminal device stack formation methods202110,916,696Method for manufacturing magnetic memory element with post pillar formation annealing202110,903,002Method for manufacturing a magnetic memory element using Ru and diamond like carbon hard masks202110,886,330Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch202110,879,454Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application202010,840,439Magnetic tunnel junction (MTJ) fabrication methods and systems202010,840,436Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture202010,784,439Precessional spin current magnetic tunnel junction devices and methods of manufacture202010,777,736Polishing stop layer(s) for processing arrays of semiconductor elements202010,734,574Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory202010,672,976Precessional spin current structure with high in-plane magnetization for MRAM202010,665,777Precessional spin current structure with non-magnetic insertion layer for MRAM202010,651,370Perpendicular magnetic tunnel junction retention and endurance improvement202010,643,680Memory cell having magnetic tunnel junction and thermal stability enhancement layer202010,615,337Process for creating a high density magnetic tunnel junction array test platform202010,615,335Spin transfer torque structure for MRAM devices having a spin current injection capping layer202010,580,827Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching202010,553,787Precessional spin current structure for MRAM202010,516,094Process for creating dense pillars using multiple exposures for MRAM fabrication201910,468,588Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer201910,468,590High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory201910,461,242Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications201910,446,742Method for manufacturing a magnetic memory element array using high angle side etch to open top electrical contact201910,424,723Magnetic tunnel junction devices including an optimization layer201910,411,185Process for creating a high density magnetic tunnel junction array test platform201910,388,860Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard mask201910,388,853Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers201910,381,553Memory cell having magnetic tunnel junction and thermal stability enhancement layer201910,374,153Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material201910,374,147Perpendicular magnetic tunnel junction having improved reference layer stability201910,367,136Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure201910,367,139Methods of manufacturing magnetic tunnel junction devices201910,361,359Magnetic random access memory with reduced internal operating temperature range201910,339,993Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching201910,319,900Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density201910,236,439Switching and stability control for perpendicular magnetic tunnel junction device201910,211,395Method for combining NVM class and SRAM class MRAM elements on the same chip201910,147,872Spin transfer torque structure for MRAM devices having a spin current injection capping layer201810,141,499Perpendicular magnetic tunnel junction device with offset precessional spin current layer201810,032,978MRAM with reduced stray magnetic fields201810,026,892Precessional spin current structure for MRAM20189,853,206Precessional spin current structure for MRAM20179,773,974'Polishing stop layer(s) for processing arrays of semiconductor elements'20179,741,926'Memory cell having magnetic tunnel junction and thermal stability enhancement layer'20179,728,712'Spin transfer torque structure for MRAM devices having a spin current injection capping layer'20179,406,876'Method for manufacturing MTJ memory device'20169,337,412'Magnetic tunnel junction structure for MRAM device'20169,263,667'Method for manufacturing MTJ memory device'20169,007,727'Magnetic head having CPP sensor with improved stabilization of the magnetization of the pinned magnetic layer'20158,772,076'Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells'20148,771,419'Roll to roll evaporation tool for solar absorber precursor formation'20148,425,753'Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films'20138,409,418'Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers'20138,404,512'Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers'20138,393,073'Method to control mask profile for read sensor definition'20138,318,530'Solar cell buffer layer having varying composition'20128,300,367'Magnetoresistance sensors pinned by an etch induced magnetic anisotropy'20128,266,785'Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability'20128,207,012'Method and apparatus for achieving low resistance contact to a metal based thin film solar cell'20128,153,469'Reaction methods to form group IBIIIAVIA thin film solar cell absorbers'20128,088,224'Roll-to-roll evaporation system and method to manufacture group IBIIAVIA photovoltaics'20128,068,315'Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers'20118,031,442'Magnetic head having CPP sensor with improved biasing for free magnetic layer'20117,920,363'TMR sensor having magnesium/magnesium oxide tunnel barrier'20117,900,342'Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy'20117,848,065'Magnetoresistive sensor having an anisotropic hard bias with high coercivity'20107,837,837'Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer and fabrication method therefor'20107,824,947'Method to improve flexible foil substrate for thin film solar cell applications'20107,773,348'High coercivity hard magnetic seedlayer'20107,697,246'Magnetoresistive sensor having biasing AFM layer in contact with free layer and a track width defined by a lead contact area'20107,676,905'Method of manufacturing a self aligned magnetoresistive sensor'20107,676,904'Method of manufacturing high sensitivity spin valve designs with ion beam treatment'20107,663,846'Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning'20107,663,847'Magnetoresistive sensor having an anisotropic hard bias without a buffer layer'20107,652,855'Magnetic sensor with extended free layer and overlaid leads'20107,652,856'Current perpendicular to plane (CPP) magnetoresistive sensor having strong pinning and small gap thickness'20107,623,319'Electrical connection structure for magnetic heads and method for making the same'20097,616,409'Magnetic sensor having a Ru/Si based seedlayer providing improved free layer biasing'20097,602,589'Magnetoresistive sensor having shape enhanced pinning and low lead resistance'20097,596,854'Method of fabrication for read head having shaped read sensor-biasing layer junctions using partial milling'20097,580,230'Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges'20097,564,659'Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement'20097,525,775'Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor'20097,522,391'Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure'20097,505,235'Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device'20097,502,209'Read sensors having nitrogenated hard bias layers and method of making the same'20097,500,303'Method of fabricating a magnetic sensor on a wafer'20097,497,008'Method of fabricating a thin film magnetic sensor on a wafer'20097,483,246'Magnetic sensor having a seedlayer for providing improved hard magnet properties'20097,475,471'Method for fabricating a magnetic head'20097,466,524'Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip'20087,466,522'Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors'20087,444,739'Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process'20087,440,243'Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same'20087,440,242'Methods and apparatus for improved read sensors of the CPP type using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer'20087,436,637'Magnetoresistive sensor having an improved pinning structure'20087,436,635'Current perpendicular to plane (CPP) magnetoresistive sensor having a highly conductive lead structure'20087,433,163'Seedlayer for high hard bias layer coercivity'20087,428,129'Methods and apparatus for improved hard magnet properties in magnetoresistive read heads using a multi-layered seed layer structure'20087,420,788'GMR and MR enhancing seedlayers for self pinned spin valves'20087,420,787'Magnetoresistive sensor having a shape enhanced pinned layer'20087,414,817'Magnetoresistive sensor having a laminated hard magnet structure for free layer biasing'20087,397,640'Methods and apparatus for improved read sensors using a multi-layered seed layer structure having a nitrogenated nickel-tantalum layer'20087,382,587'Magnetic head having self-pinned SV structures for CPP GMR applications'20087,367,110'Method of fabricating a read head having shaped read sensor-biasing layer junctions using partial milling'20087,369,371'Magnetoresistive sensor having a shape enhanced pinned layer'20087,362,543'Magnetoresistive/inductive write head assembly formed with seed layers having a uniform thickness'20087,362,547'Magnetic head having PtMn layer formed by ion beam deposition'20087,350,284'Methods of making a current-perpendicular-to-the-planes (CPP) type sensor by ion milling to the spacer layer using a mask without undercuts'20087,327,538'Lead overlay sensor with improved current path'20087,310,209'Magnetoresistive sensor having a high coercivity hard magnetic bias layer deposited over a metallic layer'20077,283,334'Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives'20077,270,854'Method for forming a head having improved spin valve properties'20077,268,977'Capping layers with high compressive stress for spin valve sensors'20077,268,985'Magnetic head having a layered hard bias layer exhibiting reduced noise'20077,259,941'Magnetoresistive sensor having a high coercivity hard bias structure'20077,244,341'Method to achieve low and stable ferromagnetic coupling field'20077,241,698'Method for sensor edge and mask height control for narrow track width devices'20077,241,697'Method for sensor edge control and track width definition for narrow track width devices'20077,230,802'Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device'20077,228,618'Method for fabricating a magnetic head'20077,224,556'Self-pinned CPP magnetoresistive sensor'20077,200,919'Method of fabricating a magnetic transducer with multilayer conductive leads including a tantalum layer, a chromium layer and a rhodium layer'20077,203,038'GMR enhancing seedlayer for self pinned spin valves'20077,194,797'Method for use in forming a read sensor for a magnetic head'20077,196,878'Self-pinned spin valve sensor with stress modification layers for reducing the likelihood of amplitude flip'20077,177,120'Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer'20077,173,796'Spin valve with a capping layer comprising an oxidized cobalt layer and method of forming same'20077,155,810'Method for fabricating a magnetic head'20077,149,062'Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness'20067,145,755'Spin valve sensor having one of two AP pinned layers made of cobalt'20067,136,264'Use of gold leads in lead overlaid type of GMR sensor'20067,119,997'Spin valve sensor having an antiparallel (AP) self-pinned layer structure comprising cobalt for high magnetostriction'20067,116,526'Lead overlay sensor with improved current path'20067,111,385'Method for improving hard bias properties of layers in a magnetoresistive sensor'20067,092,219'Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives'20067,088,561'Method of making a tunnel valve sensor with improved free layer sensitivity'20067,088,562'Electrical lead structures having crystalline structures that match underlying magnetic hard bias layers for magnetoresistive sensors'20067,085,111'Low resistance antiparallel tab magnetoresistive sensor'20067,085,110'Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive'20067,082,017'High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure'20067,070,697'Methods of making a read sensor with use of a barrier structure for depositing materials'20067,064,938'Spin valve sensor with a nitrogen sputtered free layer'20067,064,935'Magnetoresistive sensor having leads with vertical end walls'20067,061,728'High linear density read head with a contiguous junction and minimal shield shorts'20067,061,729'Protective cap in lead overlay magnetic sensors'20067,038,889'Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer'20067,038,892'Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer'20067,038,890'Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure'20067,019,949'Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip'20067,019,950'Magnetoresistive sensor having bias magnets with steep endwalls'20067,009,822'AMR Sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction'20066,996,894'Methods of making magnetic heads with improved contiguous junctions'20066,980,404'Method and apparatus for improving soft magnetic properties of a spin valve while retaining high giant magnetoresistance'20056,961,224'GMR enhancing seed layer for self pinned spin valves'20056,948,231'Method of depositing material into high aspect ratio features'20056,907,655'Method for manufacturing a spin valve having an enhanced free layer'20056,891,704'Tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layer'20056,878,240'Apparatus and method for obtaining symmetrical junctions between a read sensor and hard bias layers'20056,865,062'Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer'20056,861,177'Method of forming a read sensor using a lift-off mask having a hardmask layer and a release layer'20056,859,348'Hard biased self-pinned spin valve sensor with recessed overlaid leads'20056,856,493'Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer'20056,853,519'Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer'20056,826,021'Spin valve sensor having ultra-thin freelayers including nickel-iron, ruthenium, and a cobalt-iron nanolayer'20046,820,322'Method of making a spin valve sensor with a free layer structure sputter deposited in a nitrogen atmosphere'20046,813,121'Magnetic transducer with multilayer conductive leads including a tantalum layer, a chromium layer and a rhodium layer'20046,785,102'Spin valve sensor with dual self-pinned AP pinned layer structures'20046,785,103'Magnetoresistance sensor with reduced side reading'20046,783,635'Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance'20046,785,101'Overlaid lead giant magnetoresistive head with side reading reduction'20046,751,844'Method of making a spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer'20046,751,072'High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure'20046,744,607'Exchange biased self-pinned spin valve sensor with recessed overlaid leads'20046,741,432'Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structure'20046,735,061'Read head sensor with a reactively sputtered pinning layer structure'20046,728,083'Method of making a spin valve sensor with a controlled ferromagnetic coupling field'20046,700,757'Enhanced free layer for a spin valve sensor'20046,700,755'Spin valve sensor with modified magnetostriction'20046,662,432'Method of making a free layer for a spin valve sensor with a lower uniaxial anisotropy field'20036,661,622'Method to achieve low and stable ferromagnetic coupling field'20036,655,006'Method of making a tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layer'20036,654,211'Read head including a spin valve sensor with a specular reflecting cap layer structure'20036,652,906'Fabrication of a magnetoresistance sensor structure having a spacer layer produced by multiple deposition and oxidation steps'20036,636,400'Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer'20036,631,549'Method of making a seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor'20036,624,985'Pinning layer seeds for CPP geometry spin valve sensors'20036,594,884'Method of making a multilayered pinned layer structure for improved coupling field and GMR for spin valve'20036,594,123'AP pinned spin valve read head with a negative ferromagnetic field biased for zero asymmetry'20036,583,969'Pinned layer structure having nickel iron film for reducing coercivity of a free layer structure in a spin valve sensor'20036,560,078'Bilayer seed layer for spin valves'20036,552,881'Spin valve sensor with magnetic and nonmagnetic layers for improving asymmetry and softness of a free layer structure'20036,460,243'Method of making low stress and low resistance rhodium (RH) leads'20026,437,950'Top spin valve sensor that has an iridium manganese (IrMn) pinning layer and an iridium manganese oxide (IrMnO) seed layer'20026,430,013'Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer'20026,428,657'Magnetic read head sensor with a reactively sputtered pinning layer structure'20026,413,380'Method and apparatus for providing deposited layer structures and articles so produced'20026,404,606'Seed layer structure for a platinum manganese pinning layer in a spin valve sensor'20026,398,924'Spin valve sensor with improved pinning field between nickel oxide (NiO) pinning layer and pinned layer'20026,381,106'Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layer'20026,353,518'Spin valve sensor having antiparallel (AP) pinned layer structure with low coercivity and high resistance'20026,353,519'Spin valve sensor having antiparallel (AP) pinned layer structure with high resistance and low coercivity'20026,327,122'Spin valve sensor having antiparallel (AP) pinned layer with high resistance and low coercivity'20016,317,299'Seed layer for improving pinning field spin valve sensor'20016,315,839'Method of making a keeper layer for a spin valve sensor with low intrinsic anisotropy field'20016,306,266'Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance'20016,296,741'Method of making oxide barrier layer for a spin tunnel junction'20016,295,187'Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer'20016,282,068'Antiparallel (AP) pinned read head with improved GMR'20016,275,362'Magnetic read head having spin valve sensor with improved seed layer for a free layer'20016,268,985'Read head having spin valve sensor with improved capping layer'20016,249,406'Magnetoresistive sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic anisotropy and near zero magnetostriction'20016,238,531'Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system'20016,226,159'Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors'20016,226,158'High operating temperature gold leads for a read sensor'20016,218,056'Method of making highly defined bilayer lift-off mask'20016,219,207'Read sensor having high conductivity multilayer lead structure with a molybdenum layer'20016,219,210'Spin valve sensor with nickel oxide pinning layer on a chromium seed layer'20016,208,491'Spin valve with improved capping layer structure'20016,208,492'Seed layer structure for spin valve sensor'20016,201,671'Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor'20016,201,672'Spin valve sensor having improved interface between pinning layer and pinned layer structure'20016,197,164'Method and apparatus to improve the uniformity of ion beam deposited films in an ion beam sputtering system'20016,160,687'Method of providing improvement in the prevention of shield-to-lead shorts in MR/GMR heads, MR/GMR heads produced thereby and storage devices using MR/GMR heads produced thereby'20006,086,727'Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system'20006,063,244'Dual chamber ion beam sputter deposition system'20006,038,107'Antiparallel-pinned spin valve sensor'20005,883,764'Magnetoresistive sensor having multi-layered refractory metal conductor leads'19995,871,622'Method for making a spin valve magnetoresistive sensor'19995,811,155'Method of fabricating a layered magnetic head'19985,696,654'Dual element magnetoresistive sensor with antiparallel magnetization directions for magnetic state stability'19975,591,533'Thin film magnetic transducer having a stable soft film for reducing asymmetry variations'19975,492,605'Ion beam induced sputtered multilayered magnetic structures'19965,491,600'Multi-layer conductor leads in a magnetoresistive head'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2008Patents assigned to IBM (72)· patent assignee history
1996–2021Based in Morgan Hill, CA, US· patent location history
2003–2010Patents assigned to HITACHI GLOBAL STORAGE TECH (94)· patent assignee history
2006–2014Patents assigned to PINARBASI MUSTAFA (10)· patent assignee history
2016–2020Patents assigned to SPIN TRANSFER TECH INC (16)· patent assignee history
2019–2021Patents assigned to SPIN MEMORY INC (37)· patent assignee history
2019–2021Based in Fremont, CA, US· patent location history
2019Based in West Hill, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI GLOBAL STORAGE TECH | 94 | 2003–2010 |
| IBM | 72 | 1996–2008 |
| SPIN MEMORY INC | 37 | 2019–2021 |
| SPIN TRANSFER TECH INC | 16 | 2016–2020 |
| PINARBASI MUSTAFAself | 10 | 2006–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Morgan Hill, California, US | 224 | 1996–2021 |
| Fremont, California, US | 10 | 2019–2021 |
| West Hill, California, US | 1 | 2019 |